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Browsing by Author Huynh, Sa Hoang

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Showing results 1 to 8 of 8
Issue DateTitleAuthor(s)
1-Jan-2019The effect of a and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaSb grown by metalorganic chemical vapor depositionHa, Minh Thien Huu; Huynh, Sa Hoang; Do, Huy Binh; Lee, Ching Ting; Luc, Quang Ho; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 電子與資訊研究中心; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Microelectronics and Information Systems Research Center; International College of Semiconductor Technology
1-Feb-2018Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) SubstrateYu, Hung Wei; Anandan, Deepak; Hsu, Ching Yi; Hung, Yu Chih; Su, Chun Jung; Wu, Chien Ting; Kakkerla, Ramesh Kumar; Minh Thien Huu Ha; Huynh, Sa Hoang; Tu, Yung Yi; Chang, Edward Yi; 材料科學與工程學系; 電機學院; 電子工程學系及電子研究所; 光電工程學系; Department of Materials Science and Engineering; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics; Department of Photonics
1-Jul-2017Growth of high-quality In0.28Ga0.72Sb/AlSb/GaSb/GaAs heterostructure by metalorganic chemical vapor deposition for single-channel Sb-based complementary metal-oxide-semiconductor applicationsHuynh, Sa Hoang; Ha, Minh Thien Huu; Do, Huy Binh; Nguyen, Tuan Anh; Yu, Hung Wei; Luc, Quang Ho; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
5-Sep-2016Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor depositionHuynh, Sa Hoang; Minh Thien Huu Ha; Huy Binh Do; Quang Ho Luc; Yu, Hung Wei; Chang, Edward Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-Mar-2018In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma TreatmentLuc, Quang Ho; Yang, Kun Sheng; Lin, Jia Wei; Chang, Chia Chi; Huy Binh Do; Huynh, Sa Hoang; Minh Thien Huu Ha; Tuan Anh Nguyen; Lin, Yueh Chin; Hu, Chenming; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 電機學院; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
Dec-2016Investigation of Multilayer TiNi Alloys as the Gate Metal for nMOS In0.53Ga0.47AsDo, Huy Binh; Luc, Quang Ho; Ha, Minh Thien Huu; Huynh, Sa Hoang; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-Aug-2017Study of the interface stability of the metal (Mo, Ni, Pd)/HfO2/AlN/InGaAs MOS devicesDo, Huy Binh; Luc, Quang Ho; Ha, Minh Thien Huu; Huynh, Sa Hoang; Nguyen, Tuan Anh; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
2017使用有機化學氣相沉積系統以介面差排陣列磊晶成長三五族銻化物材料對互補式金屬氧化物半導體之應用黃沙皇; 張翼; Huynh, Sa Hoang; Chang, Edward Yi; 材料科學與工程學系所
Showing results 1 to 8 of 8