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Issue DateTitleAuthor(s)
29-Apr-2013Atomic-level quantized reaction of HfOx memristorSyu, Yong-En; Chang, Ting-Chang; Lou, Jyun-Hao; Tsai, Tsung-Ming; Chang, Kuan-Chang; Tsai, Ming-Jinn; Wang, Ying-Lang; Liu, Ming; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013Current Uniformity Improvement in Flexible Resistive MemoryZheng, Zhi-Wei; Cheng, Chun-Hu; Chou, Kun-I; Liu, Ming; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015Demonstration of 3D Vertical RRAM with Ultra Low-leakage, High-selectivity and Self-compliance Memory CellsLuo, Qing; Xu, Xiaoxin; Liu, Hongtao; Lv, Hangbing; Gong, Tiancheng; Long, Shibing; Liu, Qi; Sun, Haitao; Banerjee, Writam; Li, Ling; Gao, Jianfeng; Lu, Nianduan; Chung, Steve S.; Li, Jing; Liu, Ming; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016Fully CMOS Compatible 3D Vertical RRAM with Self-aligned Self-selective Cell Enabling Sub-5nm ScalingXu, Xiaoxin; Luo, Qing; Gong, Tiancheng; Lv, Hangbing; Long, Shibing; Liu, Qi; Chung, Steve S.; Li, Jing; Liu, Ming; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
10-Dec-2012Improved current distribution in resistive memory on flexible substrate using nitrogen-rich TaN electrodeZheng, Zhi-Wei; Cheng, Chun-Hu; Chou, Kun-I; Liu, Ming; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2013Ni/GeOx/TiOy/TaN RRAM on Flexible Substrate With Excellent Resistance DistributionChou, K. I.; Cheng, C. H.; Zheng, Z. W.; Liu, Ming; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2018Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F-2 and K-means Clustering for Power ReductionZhou, Keji; Xue, Xiaoyong; Yang, Jianguo; Xu, Xiaoxin; Lv, Hangbing; Wang, Mingyu; Jing, Ming'e; Liu, Wenjun; Zeng, Xiaoyang; Chung, Steve S.; Li, Jing; Liu, Ming; 交大名義發表; National Chiao Tung University
26-Nov-2012Ohmic contact on n-type Ge using Yb-germanideZheng, Zhi-Wei; Ku, Teng-Chieh; Liu, Ming; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2019Recommended Methods to Study Resistive Switching DevicesLanza, Mario; Wong, H-S Philip; Pop, Eric; Ielmini, Daniele; Strukov, Dimitri; Regan, Brian C.; Larcher, Luca; Villena, Marco A.; Yang, J. Joshua; Goux, Ludovic; Belmonte, Attilio; Yang, Yuchao; Puglisi, Francesco M.; Kang, Jinfeng; Magyari-Kope, Blanka; Yalon, Eilam; Kenyon, Anthony; Buckwell, Mark; Mehonic, Adnan; Shluger, Alexander; Li, Haitong; Hou, Tuo-Hung; Hudec, Boris; Akinwande, Deji; Ge, Ruijing; Ambrogio, Stefano; Roldan, Juan B.; Miranda, Enrique; Sune, Jordi; Pey, Kin Leong; Wu, Xing; Raghavan, Nagarajan; Wu, Ernest; Lu, Wei D.; Navarro, Gabriele; Zhang, Weidong; Wu, Huaqiang; Li, Runwei; Holleitner, Alexander; Wurstbauer, Ursula; Lemme, Max C.; Liu, Ming; Long, Shibing; Liu, Qi; Lv, Hangbing; Padovani, Andrea; Pavan, Paolo; Valov, Ilia; Jing, Xu; Han, Tingting; Zhu, Kaichen; Chen, Shaochuan; Hui, Fei; Shi, Yuanyuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2017Resistive random access memory (RRAM) technology: From material, device, selector, 3D integration to bottom-up fabricationChen, Hong-Yu; Brivio, Stefano; Chang, Che-Chia; Frascaroli, Jacopo; Hou, Tuo-Hung; Hudec, Boris; Liu, Ming; Lv, Hangbing; Molas, Gabriel; Sohn, Joon; Spiga, Sabina; Teja, V. Mani; Vianello, Elisa; Wong, H. -S. Philip; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 10 of 10