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Showing results 1 to 11 of 11
Issue DateTitleAuthor(s)
2006<bold>Read Current Instability Arising from Random Telegraph Noise in Localized Storage, Multi-Level SONOS Flash Memory</bold>Gu, S. H.; Li, C. W.; Wang, Tahui; Lu, W. P.; Chen, K. C.; Ku, Joseph; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Cell Endurance Prediction from a Large-area SONOS CapacitorLee, C. H.; Tu, W. H.; Gu, S. H.; Wu, C. W.; Lin, S. W.; Yeh, T. H.; Chen, K. F.; Chen, Y. J.; Hsieh, J. Y.; Huang, I. J.; Zous, N. K.; Han, T. T.; Chen, M. S.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, C. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007Characterization and Monte Carlo analysis of secondary electrons induced program disturb in a buried diffusion bit-line SONOS flash memoryTang, Chun-Jung; Li, C. W.; Wang, Tahui; Gu, S. H.; Chen, P. C.; Chang, Y. W.; Lu, T. C.; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2018Chip-Level Characterization and RTN-Induced Error Mitigation beyond 20nm Floating Gate Flash MemoryLin, T. W.; Ku, S. H.; Cheng, C. H.; Lee, C. W.; Ijen-Huang; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2018Error Characterization and ECC Usage Relaxation beyond 20nm Floating Gate NAND Flash MemoryKu, S. H.; Lin, T. W.; Cheng, C. H.; Lee, C. W.; Chen, Ti-Wen; Tsai, Wen-Jer; Lu, T. C.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Investigation of charge loss in cycled NBit cells via field and temperature accelerationsTsai, W. J.; Zous, N. K.; Chen, H. Y.; Liu, Lenvis; Yeh, C. C.; Chen, Sam; Lu, W. P.; Wang, Tahui; Ku, Joseph; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Overall Operation Considerations for a SONOS-based MemoryLee, C. H.; Tu, W. H.; Chong, L. H.; Gu, S. H.; Chen, K. F.; Chen, Y. J.; Hsieh, J. Y.; Huang, I. J.; Zous, N. K.; Han, T. T.; Chen, M. S.; Lu, W. P.; Chen, K. C.; Wang, Tahui; Lu, C. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Program Charge Effect on Random Telegraph Noise Amplitude and Its Device Structural Dependence in SONOS Flash MemoryChiu, J. P.; Chou, Y. L.; Ma, H. C.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2009Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory CellMa, H. C.; Chou, Y. L.; Chiu, J. P.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2011Variations of V(t) Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation EffectChou, Y. L.; Chung, Y. T.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2011Variations of V-t Retention Loss in a SONOS Flash Memory Due to a Current-Path Percolation EffectChou, Y. L.; Chung, Y. T.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 11 of 11