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Showing results 1 to 17 of 17
Issue DateTitleAuthor(s)
15-May-1997Crystalline structure changes in GaN films grown at different temperaturesLin, HC; Ou, J; Chen, WK; Chen, WH; Lee, MC; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
1998The effects of isoelectronic in-doping in GaN films grown by MOCVDShu, CK; Ou, J; Lin, HC; Pan, YC; Lee, WH; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
1-Jun-1998An elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxyOu, J; Chen, WK; Lin, HC; Pan, YC; Lee, MC; 電子物理學系; Department of Electrophysics
15-Dec-1997Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxyChen, WK; Pan, YC; Lin, HC; Ou, J; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
15-Dec-1997Growth and X-ray characterization of an InN film on sapphire prepared by metalorganic vapor phase epitaxyChen, WK; Pan, YC; Lin, HC; Ou, J; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
1-Sep-1999A high-temperature thermodynamic model for metalorganic vapor phase epitaxial growth of InGaNOu, J; Pan, YC; Lee, WH; Shu, CK; Lin, HC; Lee, MC; Chen, WH; Chiang, CI; Chang, H; Chen, WK; 電子物理學系; Department of Electrophysics
1-Dec-1995Influence of As/Al and Sb/Al gas flow ratios on growth of AlAs1-xSbx alloysChen, WK; Ou, J; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
3-Aug-1999Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor depositionShu, CK; Ou, J; Lin, HC; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
3-Aug-1998Isoelectronic In-doping effect in GaN films grown by metalorganic chemical vapor depositionShu, CK; Ou, J; Lin, HC; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
8-Sep-1997Negative differential resistance in InGaAs/AlAsSb/InGaAs single-barrier heterostructureChen, WK; Cheng, RH; Ou, J; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
2000Optical and electrical investigations of isoelectronic In-doped GaN filmsShu, CK; Lee, WH; Pan, YC; Chen, CC; Lin, HC; Ou, J; Chen, WH; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
1-Feb-1998Photoluminescence studies of GaN films of different buffer layer and doping concentrationShen, CC; Shu, CK; Lin, HC; Ou, J; Chen, WK; Lee, MC; Chen, WH; 電子物理學系; Department of Electrophysics
1-Feb-1998Photoluminescence studies of GaN films of different buffer layer and doping concentrationShen, CC; Shu, CK; Lin, HC; Ou, J; Chen, WK; Lee, MC; Chen, WH; 電子物理學系; Department of Electrophysics
1-Sep-1998Raman and X-ray studies of InN films grown at different temperatures by metalorganic vapor phase epitaxyChen, WK; Lin, HC; Pan, YC; Ou, J; Shu, CK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
2-Nov-1998Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxyLee, MC; Lin, HC; Pan, YC; Shu, CK; Ou, J; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
1998Raman scattering in ternary AlAsxSb1-x filmsLin, HC; Ou, J; Hsu, CH; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
28-Jan-2002Thermal stability study of Ni/Ta n-GaN Schottky contactsChen, GL; Chang, FC; Shen, KC; Ou, J; Chen, WH; Lee, MC; Chen, WK; Jou, MJ; Huang, CN; 電子物理學系; Department of Electrophysics
Showing results 1 to 17 of 17