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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
1-Sep-1999Effects of H-2 plasma treatment on low dielectric constant methylsilsesquioxaneChang, TC; Liu, PT; Mei, YJ; Mor, YS; Perng, TH; Yang, YL; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2005Electrical characteristics of thin HfO(2) gate dielectrics prepared using different pre-deposition surface treatmentsChen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2005Electrical characteristics of thin HfO2 gate dielectrics prepared using different pre-deposition surface treatmentsChen, CW; Chien, CH; Perng, TH; Yang, MJ; Liang, JS; Lehnen, P; Tsui, BY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2003Enhanced negative substrate bias degradation in nMOSFETs with ultrathin plasma nitrided oxidePerng, TH; Chien, CH; Chen, CW; Lin, HC; Chang, CY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2004HfO2 MIS capacitor with copper gate electrodePerng, TH; Chien, CH; Chen, CW; Yang, MJ; Lehnen, P; Chang, CY; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-Dec-2004High-density MIM capacitors with HfO(2) dielectricsPerng, TH; Chien, CH; Chen, CW; Lehnen, P; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Hot-electron-induced electron trapping in 0.13 mu m nMOSFETs with ultrathin (EOT=1.6 nm) nitrided gate oxideChen, CW; Chien, CH; Perng, TH; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 7 of 7