National Chiao Tung University Institutional Repository：Browsing IR@NCTU

Browsing by Author Tsai, JW

Showing results 1 to 7 of 7

Issue Date	Title	Author(s)
1-Aug-1997	The electrical characteristics of the amorphous silicon thin film transistors with dual intrinsic layers	Tsai, JW; Cheng, HC; Chou, A; Su, FC; Luo, FC; Tuan, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1997	The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states	Cheng, HC; Tsai, JW; Huang, CY; Luo, FC; Tuan, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-1997	The instability characteristics of amorphous silicon thin film transistors with various interfacial and bulk defect states	Cheng, HC; Tsai, JW; Huang, CY; Luo, FC; Tuan, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2000	The instability mechanisms of hydrogenated amorphous silicon thin film transistors under AC bias stress	Huang, CY; Teng, TH; Tsai, JW; Cheng, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1997	Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition	Tsai, JW; Huang, CY; Tai, YH; Cheng, HC; Su, FC; Luo, FC; Tuan, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-1997	Reducing threshold voltage shifts in amorphous silicon thin film transistors by hydrogenating the gate nitride prior to amorphous silicon deposition	Tsai, JW; Huang, CY; Tai, YH; Cheng, HC; Su, FC; Luo, FC; Tuan, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2000	Turnaround phenomenon of threshold voltage shifts in amorphous silicon thin film transistors under negative bias stress	Huang, CY; Tsai, JW; Teng, TH; Yang, CJ; Cheng, HC; 奈米中心; Nano Facility Center

Showing results 1 to 7 of 7