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Issue DateTitleAuthor(s)
2001Barrier characteristics of PECVD alpha-SiC : H dielectricsChiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jeng, SM; Jang, SM; Yu, CH; Liang, MS; 電子物理學系; Department of Electrophysics
2001Comparative study of physical and electrical characteristics of F- and C-doped low-K CVD oxidesWu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2001Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLKWu, ZC; Shiung, ZW; Wu, RG; Liu, YL; Wu, WH; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Hu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-1999Effects of BF2+ implantation on the oxidation resistance of copper filmsWu, ZC; Liu, YL; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2004Effects of O-2- and N-2-plasma treatments on copper surfaceChiang, CC; Chen, MC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Electrical reliability issues of integrating low-K dielectrics with Cu metallizationWu, ZC; Shiung, ZW; Wang, CC; Fang, KL; Wu, RG; Liu, YL; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-1999Electrical reliability issues of integrating thin Ta and TaN barriers with Cu and low-K dielectricWu, ZC; Wang, CC; Wu, RG; Liu, YL; Chen, PS; Zhu, ZM; Chen, MC; Chen, JF; Chang, CI; Chen, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Improvement in leakage current and breakdown field of Cu-comb capacitor using a silicon oxycarbide dielectric barrierChiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Leakage and breakdown mechanisms in cu damascene with a bilayer-structured a-SiCN/a-SiC dielectric barrierChiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2004Leakage and breakdown mechanisms of Cu comb capacitors with bilayer-structured alpha-SiCN/alpha-SiC Cu-cap barriersChiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2001Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectricWu, ZC; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Li, LJ; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
10-Jan-2000Passivation of copper films with magnesium doping using recoil ion implantationWu, ZC; Liu, YL; Chen, MC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxaneChiang, CC; Chen, CC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Physical and barrier properties of PECVD amorphous silicon-oxycarbide from trimethylsilane and CO2Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2003Physical and barrier properties of plasma enhanced chemical vapor deposition alpha-SiC : N : H filmsChiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2003Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiC : H films from trimethylsilane and tetramethylsilaneChiang, CC; Chen, MC; Ko, CC; Wu, ZC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2001Physical and electrical characteristics of F- and C-doped low dielectric constant chemical vapor deposited oxidesWu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jun-2001Physical and electrical characteristics of methylsilane- and trimethylsilane-doped low dielectric constant chemical vapor deposited oxidesWu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002TDDB reliability improvement in Cu damascene by using a bilayer-structured PECVD SiC dielectric barrierChiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Feb-2004TDDB reliability improvement of Cu damascene with a bilayer-structured alpha-SiC : H dielectric barrierChiang, CC; Chen, MC; Wu, ZC; Li, LJ; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 20 of 20