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公開日期標題作者
15-十月-2000A 1.2-V operation power pseudomorphic high electron mobility transistor for personal handy phone handset applicationChang, EY; Lee, DH; Chen, SH; 材料科學與工程學系; Department of Materials Science and Engineering
200510Gbps operation of a metamorphic InGaP buffered In0.53Ga0.47As p-i-n photodetector grown on GaAs substrate - art. no. 602023Liao, YS; Lin, GR; Lin, CK; Chu, YS; Kuo, HC; Feng, M; 光電工程學系; Department of Photonics
20045GHz射頻吉伯特混頻器之設計與實作吳澤宏; 孟慶宗; 電信工程研究所
2002850nm面射型雷射之近場光學研究徐文君; wen-chun Hsu; 王興宗; 陳永富; 電子物理系所
2003850nm面射型雷射之高速特性量測與分析呂俊毅; Chun-Yi Lu; 王興宗; Shing-Chung Wang; 光電工程學系
1996950至2050MHz砷化鎵單晶微波積體電路降頻器之設計、模擬與量測汪大暉; WANG TAHUI; 國立交通大學電子工程學系
1-十一月-2019Analysis and design of wideband active power splitter with interleaf transmission line topologyHuang, Ching-Ying; Hu, Robert; Niu, Dow-Chi; Chang, Chi-Yang; 電機學院; College of Electrical and Computer Engineering
1-九月-2018The Analysis of Dual-Junction Tandem Solar Cells Enhanced by Surface Dispensed Quantum DotsHsu, Shun-Chieh; Huang, Yu-Ming; Kao, Yu-Cheng; Kuo, Hao-Chung; Horng, Ray-Hua; Lin, Chien-Chung; 光電系統研究所; 電子工程學系及電子研究所; 光電工程研究所; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; Institute of EO Enginerring
1-二月-2009Application of Pd/Ge/Cu alloyed ohmic contact system to n-type GaAs for fully Cu-metallized InGaP/GaAs HBTsChen, Ke-Shian; Chang, Edward Yi; Lin, Chia-Ching; Lee, Cheng-Shih; 材料科學與工程學系; Department of Materials Science and Engineering
15-十一月-2006Atomistic modeling of dislocation activity in nanoindented GaAsJian, Sheng-Rui; Fang, Te-Hua; Chuu, Der-San; Ji, Liang-Wen; 電子物理學系; Department of Electrophysics
1-三月-2009Bipolar Cascade Superluminescent Diodes at the 1.04-mu m Wavelength RegimeGuol, Shi-Hao; Wang, Jr-Hung; Wu, Yu-Huei; Lin, Wei; Yang, Ying-Jay; Sun, Chi-Kuang; Pan, Ci-Ling; Shi, Jin-Wei; 光電工程學系; Department of Photonics
1-十一月-2008Characteristics of GaAs transformers for RFIC applicationsMeng, Chinchun; Teng, Ya-Hui; Syu, Jin-Siang; Lin, Yi-Chen; Jhong, Jhin-Ci; Yen, Ying-Chieh; 電信工程研究所; Institute of Communications Engineering
2007Characteristics of Integrated RF Transformers on GaAs SubstrateMeng, Chinchun; Teng, Ya-Hui; Lin, Yi-Chen; Jhong, Jhin-Ci; Yen, Ying-Chieh; 電信工程研究所; Institute of Communications Engineering
1-一月-2016Colloidal Quantum Dot Enhanced Dual-Junction Tandem Solar CellsHsu, Shun-Chieh; Kao, Yu-Cheng; Han, Hau-Vei; Kuo, Hao-Chung; Horng, Ray-Hua; Lin, Chien-Chung; 光電系統研究所; 光電工程學系; Institute of Photonic System; Department of Photonics
1-八月-2006Copper-airbridged low-noise GaAs PHEMT with Ti/WNx/Ti diffusion barrier for high-frequency applicationsLee, Cheng-Shih; Lien, Yi-Chung; Chang, Edward Yi; Chang, Huang-Choung; Chen, Szu-Houng; Lee, Ching-Ting; Chu, Li-Hsin; Chang, Shang-Wen; Hsieh, Yen-Chang; 材料科學與工程學系; 友訊交大聯合研發中心; Department of Materials Science and Engineering; D Link NCTU Joint Res Ctr
1-十月-2011Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivationMerckling, C.; Chang, Y. C.; Lu, C. Y.; Penaud, J.; Brammertz, G.; Scarrozza, M.; Pourtois, G.; Kwo, J.; Hong, M.; Dekoster, J.; Meuris, M.; Heyns, M.; Caymax, M.; 交大名義發表; National Chiao Tung University
1995Delta 摻雜磷化銦鎵/砷化銦鎵/砷化鎵調變摻雜場效電晶體之研究曾國權; Tzeng, Kuo-Chyuan; 施敏; Simon Min Sze; 電子研究所
1-一月-2017Design of 18 similar to 26GHz Receiver with Wideband RF, LO and IF in 0.15 mu m GaAs pHEMT ProcessChen, Ying; Yu, Zhong-I; Huang, Ching-Ying; Hsieh, Kuan-Han; Hu, Robert; 電機學院; College of Electrical and Computer Engineering
1-五月-2017Diagnosis of GaInAs/GaAsP Multiple Quantum Well Solar Cells With Bragg Reflectors via Absolute ElectroluminescenceZhu, Lin; Yoshita, Masahiro; Tsai, JiaLing; Wang, YiChin; Hong, ChungYu; Chi, GuoChung; Kim, Changsu; Yu, Peichen; Akiyama, Hidefumi; 光電工程學系; Department of Photonics
15-二月-1996The dynamics of thermal annealing in arsenic-ion-implanted GaAsChen, WC; Lin, GR; Chang, CS; 交大名義發表; 光電工程學系; National Chiao Tung University; Department of Photonics
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