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公開日期標題作者
1-五月-2001Characterization of ultrathin oxynitride (18-21 angstrom) gate dielectrics by NH3 nitridation and N2O RTA treatmentPan, TM; Lei, TF; Wen, HC; Chao, TS; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-十二月-1999The combined effects of nitrogen implantation at S/D extension and N2O oxide on 0.18 mu m N- and P-metal oxide field effect transistors (MOSFETs)Chao, TS; Chang, SJ; Chien, CH; Lin, HC; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2002Determination of ultrathin oxide thickness by subthreshold swingCha, TS; 電子物理學系; Department of Electrophysics
1-三月-1997Effects of electrode materials and annealing ambients on the electrical properties of TiO2 thin films by metalorganic chemical vapor depositionSun, SC; Chen, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1995FOURIER-TRANSFORM INFRARED SPECTROSCOPIC STUDY OF OXIDE-FILMS GROWN IN PURE N2OCHAO, TS; CHEN, WH; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2001High quality interpoly-oxynitride grown by NH3 nitridation and N2O RTA treatmentPan, TM; Lei, TF; Yang, WL; Cheng, CM; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1998Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidationLai, CS; Chao, TS; Lei, TF; Lee, CL; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1998Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidationLai, CS; Chao, TS; Lei, TF; Lee, CL; Huang, TY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1995IMPROVEMENT OF THIN OXIDES THERMALLY GROWN ON THE REACTIVE-ION-ETCHED SILICON SUBSTRATESUENG, SY; WANG, PW; KANG, TK; CHAO, TS; CHEN, WH; DAI, BT; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2005Improvements on electrical characteristics of p-channel metal-oxide-semiconductor field effect transistors with HfO2 gate stacks by post deposition N2O plasma treatmentLu, WT; Chien, CH; Lan, WT; Lee, TC; Yang, MJ; Shen, SW; Lehnen, P; Huang, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1995N2O氣體於深次微米金氧半場效電晶體及複晶矽氧化層之應用賴朝松; Lai, Chao-Song; 雷添福; 李崇仁; Lei, Tian Fu; Li, Chong-Ren; 電子研究所
1-十一月-2003Simultaneous quality improvement of tunneling- and interpoly-oxides of nonvolatile memory devices by NH3 and N2O nitridationChao, TS; Chang, TH; 電子物理學系; Department of Electrophysics
1-十一月-2004Suppression of boron penetration in P+-poly-SiGe gate p-channel metal-oxide-semiconductor field-effect transistor using NH3-nitrided and N2O-grown gate oxidesYang, WL; Chao, TS; Lai, KH; 電子物理學系; Department of Electrophysics
1-一月-1970Thermal decomposition of N2O near 900 K studied by FTIR spectrometry: Comparison of experimental and theoretical O(P-3) formation kineticsPham, Tien, V; Tsay, T. J.; Lin, M. C.; 交大名義發表; 應用化學系; National Chiao Tung University; Department of Applied Chemistry
2013保護層應用在非晶態銦鎵鋅氧薄膜電晶體 之電性物理機制研究張耿維; Chang, Geng-Wei; 戴亞翔; 張鼎張; Tai, Ya-Hsiang; Chang, Ting-Chang; 光電工程研究所
1999利用 N2O 與 N2 氣體快速加熱氮化於 PECVD TEOS閘極氧化層及複晶矽氧化層之研究朱浚學; Juing-Shae Chu; 雷添福; 李崇仁; Dr. Tan-Fu Lei; Dr. Chung-Len Lee; 電子研究所
1998利用CVD TEOS 在二矽烷複晶矽和堆疊結構複晶矽薄膜上沈積氧化層之特性分析陳萬得; Won-Der Chen; 雷添福; Tan-Fu Lei; 電子研究所
2003利用氮處理改善鈷鈦酸高介電閘極氧化層黃宗彬; 趙天生; 電子物理系所
2008利用間質隔離法研究GeNNO之紅外光譜姜姿敏; Jiang, Zih-Min; 李遠鵬; Lee, Yuan-Pern; 應用化學系碩博士班
1998化學機械研磨技術和N2O退火對複晶矽氧化層特性之影響陳建宏; Jian-Hong Chen; 雷添福; Tan Fu Lei; 電子研究所
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