標題: | Improvement of reliability of metal-oxide semiconductor field-effect transistors with N2O nitrided gate oxide and N2O polysilicon gate reoxidation |
作者: | Lai, CS Chao, TS Lei, TF Lee, CL Huang, TY Chang, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
關鍵字: | N2O;polysilicon gate reoxidation;reverse short channel effect;antenna effect |
公開日期: | 1-十月-1998 |
摘要: | A systematic study of the impact of the reliability of metal-oxide semiconductor field-effect transistors (MOSFETs) with N2O nitrided gate oxides and N2O poly-reoxidation was conducted. The improvements include hot carrier immunity, suppression of reverse short channel effect and suppression of plasma-induced degradation. These improvements are due to nitrogen incorporation at the oxide/Si-substrate interface. All data presented in this study involve substantially low thermal budget (850 degrees C), making this N2O-related technology extremely attractive and promising for future scaled devices. |
URI: | http://hdl.handle.net/11536/31859 |
ISSN: | 0021-4922 |
期刊: | JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS |
Volume: | 37 |
Issue: | 10 |
起始頁: | 5507 |
結束頁: | 5509 |
顯示於類別: | 期刊論文 |