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公開日期標題作者
1-十二月-2017A 14-nm FinFET Logic CMOS Process Compatible RRAM Flash With Excellent Immunity to Sneak PathHsieh, E. Ray; Kuo, Yen Chen; Cheng, Chih-Hung; Kuo, Jing Ling; Jiang, Meng-Ru; Lin, Jian-Li; Chen, Hung-Wen; Chung, Steve S.; Liu, Chuan-Hsi; Chen, Tse Pu; Huang, Shih An; Chen, Tai-Ju; Cheng, Osbert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
六月-20163D resistive RAM cell design for high-density storage class memory-a reviewHudec, Boris; Hsu, Chung-Wei; Wang, I-Ting; Lai, Wei-Li; Chang, Che-Chia; Wang, Taifang; Frohlich, Karol; Ho, Chia-Hua; Lin, Chen-Hsi; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
9-九月-20163D Ta/TaOx/TiO2/Ti synaptic array and linearity tuning of weight update for hardware neural network applicationsWang, I-Ting; Chang, Chih-Cheng; Chiu, Li-Wen; Chou, Teyuh; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2018Analyzing Electric Field Effect by Applying an Ultra-Short Time Pulse Condition in Hafnium Oxide-Based RRAMWu, Cheng-Hsien; Lin, Shih-Kai; Pan, Chih-Hung; Chen, Po-Hsun; Lin, Wen-Yan; Chang, Ting-Chang; Tsai, Tsung-Ming; Xu, You-Lin; Shih, Chih-Cheng; Lin, Yu-Shuo; Chen, Wen-Chung; Wang, Ming-Hui; Zhang, Sheng-Dong; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2020Applications of p-n homojunction ZnO nanowires to one-diode one-memristor RRAM arraysChen, Jui-Yuan; Wu, Min-Ci; Ting, Yi-Hsin; Lee, Wei-Che; Yeh, Ping-Hung; Wu, Wen-Wei; 交大名義發表; 材料科學與工程學系; National Chiao Tung University; Department of Materials Science and Engineering
1-七月-2011Bipolar resistive switching effect in Gd2O3 films for transparent memory applicationLiu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2007CaCu3Ti4O12 (CCTO)電阻轉換特性及電阻轉換機制之研究沈佑書; Yu-Shu Shen; 邱碧秀; Bi-Shiou Chiou; 電子研究所
15-三月-2020A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memoryLin, Chih-Yang; Chang, Ting-Chang; Pan, Chih-Hung; Chen, Min-Chen; Xu, You-Lin; Tan, Yung-Fang; Wu, Pei-Yu; Chen, Chun-Kuei; Huang, Wei-Chen; Lin, Yun-Hsuan; Chao, Yu-Ting; Shou, Cheng-Yun; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2014Characterization of Oxygen Accumulation in Indium-Tin-Oxide for Resistance Random Access MemoryZhang, Rui; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Huang, Syuan-Yong; Chen, Wen-Jen; Chen, Kai-Huang; Lou, Jen-Chung; Chen, Jung-Hui; Young, Tai-Fa; Chen, Min-Chen; Chen, Hsin-Lu; Liang, Shu-Ping; Syu, Yong-En; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018Correlation between SET-State Current Level and Read Disturb Failure Time in a Resistive Switching MemorySu, P. C.; Jiang, C. M.; Wang, C. W.; Wang, Tahui; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2015Crossbar array of selector-less TaOx/TiO2 bilayer RRAMChou, Chun-Tse; Hudec, Boris; Hsu, Chung-Wei; Lai, Wei-Li; Chang, Chih-Cheng; Hou, Tuo-Hung; 電機學院; 電子工程學系及電子研究所; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
1-二月-2015Cycling-Induced SET-Disturb Failure Time Degradation in a Resistive Switching MemoryChung, Yueh-Ting; Su, Po-Cheng; Cheng, Yu-Hsuan; Wang, Tahui; Chen, Min-Cheng; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2015Direct Evidence of the Overshoot Suppression in Ta2O5-Based Resistive Switching Memory With an Integrated Access ResistorFan, Yang-Shun; Zhang, Leqi; Crotti, Davide; Witters, Thomas; Jurczak, Malgorzata; Govoreanu, Bogdan; 光電工程學系; Department of Photonics
1-八月-2013Dynamic Evolution of Conducting Nanofilament in Resistive Switching MemoriesChen, Jui-Yuan; Hsin, Cheng-Lun; Huang, Chun-Wei; Chiu, Chung-Hua; Huang, Yu-Ting; Lin, Su-Jien; Wu, Wen-Wei; Chen, Lih-Juann; 材料科學與工程學系; Department of Materials Science and Engineering
25-十二月-2010The effect of plasma deposition on the electrical characteristics of Pt/HfOx/TiN RRAM deviceLiu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Wu, Chi-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-十二月-2008Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devicesLin, Chih-Yang; Lee, Dai-Ying; Wang, Sheng-Yi; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2010Effect of ultraviolet light exposure on a HfOx RRAM deviceLiu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2015Effects of Varied Negative Stop Voltages on Current Self-Compliance in Indium Tin Oxide Resistance Random Access MemoryLin, Chih-Yang; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Pan, Chih-Hung; Zhang, Rui; Liu, Kuan-Hsien; Chen, Hua-Mao; Tseng, Yi-Ting; Hung, Ya-Chi; Syu, Yong-En; Zheng, Jin-Cheng; Wang, Ying-Lang; Zhang, Wei; Sze, Simon M.; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-八月-2015An Electronic Synapse Device Based on Solid Electrolyte Resistive Random Access MemoryZhang, Wei; Hu, Ying; Chang, Ting-Chang; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chen, Hsin-Lu; Su, Yu-Ting; Chu, Tian-Jian; Chen, Min-Chen; Huang, Hui-Chun; Su, Wan-Ching; Zheng, Jin-Cheng; Hung, Ya-Chi; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2007Endurance study of switching characteristics in NiO filmsLee, M. D.; Lo, C. K.; Peng, T. Y.; Chen, S. Y.; Yao, Y. D.; 材料科學與工程學系; Department of Materials Science and Engineering
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