1. 目前位置：

瀏覽 的方式： 關鍵字 TCAM

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 15 筆資料，總共 15 筆
公開日期標題作者
20140.339fJ/bit/search Energy-Efficient TCAM Macro Design in 40nm LP CMOSHuang, Po-Tsang; Lai, Shu-Lin; Chuang, Ching-Te; Hwang, Wei; Huang, Jason; Hu, Angelo; Kan, Paul; Jia, Michael; Lv, Kimi; Zhang, Bright; 電機工程學系; Department of Electrical and Computer Engineering
1-一月-20180.4V Reconfigurable Near-Threshold TCAM in 28nm High-k Metal-Gate CMOS ProcessChan, Yun-Sheng; Huang, Po-Tsang; Wu, Shang-Lin; Lung, Sheng-Chi; Wang, Wei-Chang; Hwang, Wei; Chuang, Ching-Te; 電子工程學系及電子研究所; 國際半導體學院; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
201728奈米近臨界電壓使用12顆電晶體搭配短反或閘型匹配線之管線化的三態內容可定址記憶體陳俊丞; 莊景德; 黃威; Chen, Jyun-Cheng; Chuang, Ching-Te; Hwang, Wei; 電子研究所
1-六月-2017A 3T1R Nonvolatile TCAM Using MLC ReRAM for Frequent-Off Instant-On Filters in IoT and Big-Data ProcessingChang, Meng-Fan; Lin, Chien-Chen; Lee, Albert; Chiang, Yen-Ning; Kuo, Chia-Chen; Yang, Geng-Hau; Tsai, Hsiang-Jen; Chen, Tien-Fu; Sheu, Shyh-Shyuan; 交大名義發表; 資訊工程學系; National Chiao Tung University; Department of Computer Science
1-二月-2011A 65 nm 0.165 fJ/Bit/Search 256 x 144 TCAM Macro Design for IPv6 Lookup TablesHuang, Po-Tsang; Hwang, Wei; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F-2 and K-means Clustering for Power ReductionZhou, Keji; Xue, Xiaoyong; Yang, Jianguo; Xu, Xiaoxin; Lv, Hangbing; Wang, Mingyu; Jing, Ming'e; Liu, Wenjun; Zeng, Xiaoyang; Chung, Steve S.; Li, Jing; Liu, Ming; 交大名義發表; National Chiao Tung University
十一月-2016A ReRAM-Based 4T2R Nonvolatile TCAM Using RC-Filtered Stress-Decoupled Scheme for Frequent-OFF Instant-ON Search Engines Used in IoT and Big-Data ProcessingChang, Meng-Fan; Huang, Lie-Yue; Lin, Wen-Zhang; Chiang, Yen-Ning; Kuo, Chia-Chen; Chuang, Ching-Hao; Yang, Keng-Hao; Tsai, Hsiang-Jen; Chen, Tien-Fu; Sheu, Shyh-Shyuan; 交大名義發表; National Chiao Tung University
1-一月-2018A Zero Flow Entry Expiration Timeout P4 SwitchHe, Cheng-Hung; Chang, Brian Y.; Chakraborty, Suchandra; Chen, Chien; Wang, Li Chun; 資訊工程學系; 電機工程學系; Department of Computer Science; Department of Electrical and Computer Engineering
2006低功率三態內容可定址式記憶體陣列與電路設計劉文彥; Wen-Yen Liu; 黃威; Wei Hwang; 電子研究所
2016利用內容定址記憶體的低耗能軟體定義網路封包分類機制林柏宏; 高榮鴻; Lin, Po-Hung; Gau, Rung-Hung; 電信工程研究所
2016在SDN 中壓縮三元表達式之轉發表王聖勛; 林寶樹; Wang, Sheng-Hsuin; Lin, Bao-Shuh; 網路工程研究所
2016實現在28奈米製程下0.4V近臨界電壓之三態內容可定址記憶體設計詹耘昇; 莊景德; 黃威; Chan, Yun-Sheng; Chuang, Ching-Te; Hwang, Wei; 電子工程學系 電子研究所
2002差異性服務網路中封包分類與訊務標示方法之討論顏寧佑; Ning-You Yan; 張仲儒; 鄭瑞光; Chung-Ju Chang; Ray-Guang Cheng; 電信工程研究所
2005應用於IPv6位址搜尋之高能源效應內容可定址記憶體電路設計張書瑋; Shu-Wei Chang; 黃威; Wei Hwang; 電子研究所
2016混合穿隧式場效電晶體與鰭式場效電晶體的三態內容可定址記憶體電路超低壓應用之研究與分析杜孟軒; 莊景德; 蘇彬; Tu, Meng-Hsuan; Chuang,Ching-Te; Su,Pin; 電子研究所
顯示 1 到 15 筆資料，總共 15 筆