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顯示 1 到 12 筆資料，總共 12 筆
公開日期標題作者
1-一月-2017BEOL Reliability Enhancement by Applying New Capping MaterialsChang, Hui-Lin; Chang, Chi Tso; 材料科學與工程學系; Department of Materials Science and Engineering
1-九月-2003Characteristics of oxide breakdown and related impact on device of ultrathin (2.2 nm) silicon dioxideSu, HD; Chiou, BS; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Cha, CP; See, YC; Sun, JYC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2002Effect of CF4 plasma pretreatment on low temperature oxidesChang, TY; Chen, HW; Lei, TF; Chao, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2014Effect of moisture on electrical properties and reliability of low dielectric constant materialsCheng, Yi-Lung; Leon, Ka-Wai; Huang, Jun-Fu; Chang, Wei-Yuan; Chang, Yu-Min; Leu, Jihperng; 材料科學與工程學系; Department of Materials Science and Engineering
15-一月-2013Effect of thermal treatment on physical, electrical properties and reliability of porogen-containing and porogen-free ultralow-k dielectricsChang, Yu-Min; Chang, Wei-Yuan; Huang, Jun-Fu; Leu, Jihperng; Cheng, Yi-Lung; 材料科學與工程學系; Department of Materials Science and Engineering
1-一月-2017Statistical Study of RRAM MLC SET Variability Induced by Filament MorphologyHsu, Chung-Wei; Zheng, Xin; Wu, Yi; Hou, Tuo-Hung; Wong, H. -S. Philip; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1998交流濺鍍高介電係數氧化物薄膜之電學及光學性質研究郭有福; Yu-Fu Kuo; 曾俊元; Tseung-Yuen Tseng; 電子研究所
2001四氟化碳電漿處理改善閘極絕緣層特性在MOS元件之研究陳筱薇; Hsiao-Wei Chen; 雷添福; Dr. Tan-Fu Lei; 電子研究所
2014探討金屬高介電層互補式金氧半電晶體崩潰的新穎方法呂品毅; Lu, Pin-Yi; 莊紹勳; 電子工程學系 電子研究所
1996深次微米CMOS時間介電崩潰及鎖定之研究陳志輝; Chen, Jyh-Huei; 陳明哲; Ming-Jer Chen; 電子研究所
1996深次微米CMOS時間介電崩潰及鎖定之研究陳志輝; Chen, Zhi-Hui; 陳明哲; Chen, Ming-Zhe; 電子研究所
2017複合高介電係數閘極介電層在三五族半導體中之缺陷特性及其可靠度研究曲崇銘; 李威儀; Chu, Chung-Ming; Lee, Wei-I; 電子物理系所
顯示 1 到 12 筆資料，總共 12 筆