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公開日期標題作者
1-七月-2007Characteristics of zirconium oxide gate ion-sensitive field-effect transistorsChang, Kow-Ming; Chao, Kuo-Yi; Chou, Ting-Wei; Chang, Chin-Tien; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2020Effect of Seed Layer on Gate-All-Around Poly-Si Nanowire Negative-Capacitance FETs With MFMIS and MFIS Structures: Planar Capacitors to 3-D FETsLee, Shen-Yang; Chen, Han-Wei; Shen, Chiuan-Huei; Kuo, Po-Yi; Chung, Chun-Chih; Huang, Yu-En; Chen, Hsin-Yu; Chao, Tien-Sheng; 電子物理學系; 光電工程學系; 光電工程研究所; Department of Electrophysics; Department of Photonics; Institute of EO Enginerring
1-五月-2007Effect of top electrode material on resistive switching properties of ZrO2 film memory devicesLin, Chih-Yang; Wu, Chen-Yu; Wu, Chung-Yi; Lee, Tzyh-Cheang; Yang, Fu-Liang; Hu, Chenming; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2020Experimental Study of 1/f(1+alpha) Noise in Transient Leakage Current of Metal-Insulator-Metal With Stacked High-k Polycrystalline FilmsLin, Hsin-Jyun; Akiyama, Koji; Hirota, Yoshihiro; Akasaka, Yasushi; Nakamura, Genji; Nagai, Hiroyuki; Morimoto, Tamotsu; Watanabe, Hiroshi; 電機工程學系; Department of Electrical and Computer Engineering
1-七月-2009High-Density and Low-Leakage-Current MIM Capacitor Using Stacked TiO2/ZrO2 InsulatorsLin, S. H.; Chiang, K. C.; Chin, Albert; Yeh, F. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2010Improved Capacitance Density and Reliability of High-k Ni/ZrO2/TiN MIM Capacitors Using Laser-Annealing TechniqueTsai, C. Y.; Chiang, K. C.; Lin, S. H.; Hsu, K. C.; Chi, C. C.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2011Improved resistive switching properties of Ti/ZrO2/Pt memory devices for RRAM applicationWang, Sheng-Yu; Tsai, Chen-Han; Lee, Dai-Ying; Lin, Chih-Yang; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2009Improved Stress Reliability of Analog Metal-Insulator-Metal Capacitors Using TiO2/ZrO2 DielectricsLin, S. H.; Chiang, K. C.; Yeh, F. S.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2019Investigation of Electrical Characteristics on LaAlO3/ZrO2/IGZO TFTs with Microwave AnnealingWu, Chien-Hung; Chang, Kow-Ming; Chen, Yi-Ming; Zhang, Yu-Xin; Cheng, Chia-Yao; 電子工程學系及電子研究所; 國際半導體學院; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-八月-2011Low-Power and Highly Reliable Multilevel Operation in ZrO2 1T1R RRAMWu, Ming-Chi; Lin, Yi-Wei; Jang, Wen-Yueh; Lin, Chen-Hsi; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
3-十二月-2007Memory effect of RF sputtered ZrO2 thin filmsLin, Chih-Yang; Wu, Chung-Yi; Wu, Chen-Yu; Lin, Chun-Chieh; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2011Nitric Acid Oxidized ZrO2 as the Tunneling Oxide of Cobalt Silicide Nanocrystal Memory DevicesHu, Chih-Wei; Chang, Ting-Chang; Tu, Chun-Hao; Chen, Yang-Dong; Lin, Chao-Cheng; Chen, Min-Chen; Lin, Jian-Yang; Sze, Simon M.; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018Novel Ag2O/ZrO2 Composites with Enhanced Photocatalytic Water DecontaminationTaufik, A.; Kristianto, Y.; Prakoso, S. P.; Saleh, R.; 應用化學系; Department of Applied Chemistry
六月-2016A numerical study of forming voltage and switching polarity dependence on Ti top electrode thickness in Zr RRAMBerco, Dan; Tseng, Tseung-Yuen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2007Structural and optical properties of ZnO films grown on silicon and their applications in MOS devices in conjunction with ZrO(2)as a gate dielectricNandi, S. K.; Chakraborty, S.; Bera, M. K.; Maiti, C. K.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011不同表面處理對二氧化鉿與二氧化鋯推疊式高介電常數材料薄膜之效果李政勳; Lee, Cheng-Hsun; 張國明; Chang, Kow-Ming; 電機學院微電子奈米科技產業專班
2011二元金屬氧化物電阻式記憶元件之界面效應研究李岱螢; Lee, Dai-Ying; 曾俊元; Tseng, Tseung-Yuen; 電子研究所
2006二氧化鋯感測層在N型及P型pH-離子感測場效電晶體上之研究與比較林佳鴻; Chia-Hung Lin; 張國明; 桂正楣; Kow-Ming Chang; Cheng-May Kwei; 電子研究所
2007以Polyimide高分子材料和NafionTM作為REFET感測層之研究林昇宇; Sheng-Yu Lin; 張國明; 桂正楣; Kow-Ming Chang; Cheng-May Kwei; 電子研究所
2009以ZrO2和聚合物做為ISFET/REFET之感測材料應用於讀出電路設計之特性與考量研究詹仲逸; Chan, Chung-Yi; 張國明; Chang, Kow-Ming; 電子研究所
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