瀏覽 的方式: 關鍵字 f(T)

跳到: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字:  
顯示 1 到 6 筆資料,總共 6 筆
公開日期標題作者
1-三月-2007Calibration 90 nm node RF mosfets, including stress degradationKao, H. L.; Kao, C. H.; Chin, A.; Liao, C. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019The Impact of Layout Dependent Intrinsic Parasitic RLC on High Frequency Performance in 3T and 4T Multi-finger nMOSFETsGuo, Jyh-Chyurn; Ou, Jyun-Rong; Lin, Jinq-Min; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2013The Impact of Layout Dependent Stress and Gate Resistance on High Frequency Performance and Noise in Multifinger and Donut MOSFETsKu, Chih-You; Yeh, Kuo-Ling; Guo, Jyh-Chyurn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2006Low-K/Cu CMOS-based SoC technology with 115-GHz f(T), 100-GHz f(max), noise 80-nm RF CMOS, high-Q MiM capacitor, and spiral Cu inductorGuo, Jyh-Chyurn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2013Narrow-Width Effect on High-Frequency Performance and RF Noise of Sub-40-nm Multifinger nMOSFETs and pMOSFETsYeh, Kuo-Liang; Guo, Jyh-Chyurn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2007Very low noise in 90nm node RF MOSFETs using a new layoutKao, H. L.; Chin, Albert; Liao, C. C.; McAlister, S. P.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics