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Showing results 1 to 7 of 7
Issue DateTitleAuthor(s)
1-Dec-2003Bi-mode breakdown test methodology of ultrathin oxideSu, HD; Chiou, BS; Ko, CY; Wu, SY; Chang, MH; Lee, KH; Chen, YS; Chao, CP; See, YC; Sun, JYC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdownHuang, SY; Chen, KM; Huang, GW; Yang, DY; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Aug-2000Forward gated-diode measurement of filled traps in high-field stressed thin oxidesChen, MJ; Kang, TK; Huang, HT; Liu, CH; Chang, YJ; Fu, KY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2000Monte Carlo sphere model for effective oxide thinning induced extrinsic breakdownHuang, HT; Chen, MJ; Chen, JH; Su, CW; Hou, CS; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Oct-2001Numerical confirmation of inelastic trap-assisted tunneling (ITAT) as SILC mechanismKang, TK; Chen, MJ; Liu, CH; Chang, YJ; Fan, SK; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004射頻金氧半場效電晶體於熱載子效應及氧化層崩潰時之特性化及模型化分析楊道諺; Dao-Yen Yang; 張俊彥; Chun-Yen Chang; 電子研究所
2002超薄氧化層元件中直接穿隧效應所引發之氧化層可靠性問題探討蔡慶威; Ching-Wei, Tsai; 汪大暉; Ta-Hui, Wang; 電子研究所
Showing results 1 to 7 of 7