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顯示 1 到 15 筆資料，總共 15 筆
公開日期標題作者
8-五月-2013Effect of Geometric Nanostructures on the Absorption Edges of 1-D and 2-D TiO2 Fabricated by Atomic Layer DepositionChang, Yung-Huang; Liu, Chien-Min; Cheng, Hsyi-En; Chen, Chih; 材料科學與工程學系; Department of Materials Science and Engineering
2015Electrical Characteristic of InGaAs Multiple-Gate MOSFET DevicesHuang, Cheng-Hao; Li, Yiming; 交大名義發表; 傳播研究所; 電機學院; National Chiao Tung University; Institute of Communication Studies; College of Electrical and Computer Engineering
1-八月-2018Exciton Localization of High-Quality ZnO/MgxZn1-x Multiple Quantum Wells on Si (111) with a Y2O3 Buffer LayerLiu, Wei-Rein; Huang, Wei-Lun; Wu, Yung-Chi; Lai, Liang-Hsun; Hsu, Chia-Hung; Hsieh, Wen-Feng; Chiang, Tsung-Hung; Wan, H. W.; Hong, M.; Kao, J.; 交大名義發表; 光電工程學系; National Chiao Tung University; Department of Photonics
1-一月-2011Gate Direct Tunneling Current in Uniaxially Compressive Strained nMOSFETs: A Sensitive Measure of Electron Piezo Effective MassLee, Wei-Han; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-十一月-2007Growth and characteristics of lead sulfide nanocrystals produced by the porous alumina membraneChen, Jung-Hsuan; Chao, Chuen-Guang; Ou, Jong-Chyan; Liu, Tzeng-Feng; 材料科學與工程學系; Department of Materials Science and Engineering
2015Investigation and Benchmark of Intrinsic Drain-Induced-Barrier-Lowering (DIBL) for Ultra-Thin-Body III-V-on-Insulator n-MOSFETsYu, Chang-Hung; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2020Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetimeKuo, Yu-Hong; Chiu, Shih-Hsuan; Tien, Che-Wei; Lin, Sheng-Di; Chang, Wen-Hao; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
十一月-2016Study of Inherent Gate Coupling Nonuniformity of InAs/GaSb Vertical TFETsHsu, Ching-Yi; Zeng, Yuping; Chang, Chen-Yen; Hu, Chenming; Chang, Edward Yi; 材料科學與工程學系; 電機學院; 電子工程學系及電子研究所; Department of Materials Science and Engineering; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
1-一月-2017Theoretical Investigation of DIBL Characteristics for Scaled Tri-Gate InGaAs-OI n-MOSFETs Including Sensitivity to Process VariationsWu, Shu-Hua; Yu, Chien-Lin; Yu, Chang-Hung; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2012一種新穎自行開發之快速精準量子模擬器用於三維度高應力下矽電洞能帶結構及反置層遷移率之研究李建志; Lee, Chien-Chih; 陳明哲; Chen, Ming-Jer; 電子研究所
1998利用Z-Scan量測硒化鋅微晶玻璃薄膜之非線性光學性質梁曉琪; Shao-Chi Liang; 謝文峰; Wen-Feng Hsieh; 光電工程學系
2010前瞻矽奈米元件變異性及傳輸特性綜合研究(II)蘇彬; Su Pin; 國立交通大學電子工程學系及電子研究所
2010超薄絕緣鍺金氧半場效電晶體在量子侷限下的短通道效應模型與分析謝欣原; Hsieh, Hsin-Yuan; 蘇彬; Su, Pin; 電子研究所
2011量子侷限效應對超薄絕緣鍺與砷化銦鎵金氧半場效電晶體的次臨界與後端閘極偏壓調變臨界電壓特性之理論研究余昌鴻; Yu, Chang-Hung; 蘇彬; Su, Pin; 電子研究所
2015量子電容對於三五族多閘極金氧半場效電晶體本質反轉層電容之影響沈信宏; Shen, Hsin-Hung; 蘇彬; Su, Pin; 電子工程學系 電子研究所
顯示 1 到 15 筆資料，總共 15 筆