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公開日期標題作者
1994Al2O3 films formed by anodic oxidation of Al-1wt.%Si-0.5wt%Cu filmsCHIU, S; CHANG, PH; TUNG, CH; 材料科學與工程學系; Department of Materials Science and Engineering
1-二月-1995AL2O3 FILMS FORMED BY ANODIC-OXIDATION OF AL-1 WEIGHT PERCENT SI-0.5 WEIGHT PERCENT CU FILMSCHIU, RL; CHANG, PH; TUNG, CH; 材料科學與工程學系; Department of Materials Science and Engineering
1-九月-1988BARRIER EFFECT OF E-BEAM EVAPORATED TUNGSTEN INTERLAYER IN AL/W/PTSI METALLIZATION LAYERCHIOU, BS; LO, HS; CHANG, PH; 電控工程研究所; Institute of Electrical and Control Engineering
1-三月-1989CHARACTERISTICS OF TITANIUM SILICIDE FORMED BY SI/MO/TI TRILAYER METALLIZATIONCHIOU, BS; YANG, BJ; CHANG, PH; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
1-五月-1995THE EFFECT OF ANODIZING TEMPERATURE ON ANODIC OXIDE FORMED ON PURE AL THIN-FILMSCHIU, RL; CHANG, PH; TUNG, CH; 材料科學與工程學系; Department of Materials Science and Engineering
1-十月-1992THE EFFECT OF SI AND CU ON THE INTERACTIONS BETWEEN AL FILMS AND A TIW BARRIER LAYERCHANG, PH; CHEN, HM; LIU, HY; 材料科學與工程學系; Department of Materials Science and Engineering
1-十月-1989EQUIVALENT-CIRCUIT MODEL IN GRAIN-BOUNDARY BARRIER LAYER CAPACITORSCHIOU, BS; LIN, ST; DUH, JG; CHANG, PH; 電控工程研究所; Institute of Electrical and Control Engineering
15-五月-1994INTERACTIONS BETWEEN AL-1 WT-PERCENT SI THIN-FILM AND W-TI BARRIER LAYERCHANG, PH; CHEN, HM; LIU, HY; BOHLMAN, JG; 材料科學與工程學系; Department of Materials Science and Engineering
1-七月-1987MICROSTRUCTURE AND PROPERTIES OF MULTILAYER-DERIVED TUNGSTEN SILICIDECHIOU, BS; RAU, HL; CHANG, PH; DUH, JG; 電控工程研究所; Institute of Electrical and Control Engineering
15-三月-1995STRUCTURES OF TANTALUM PENTOXIDE THIN-FILMS FORMED BY REACTIVE SPUTTERING OF TA METALCHANG, PH; LIU, HY; 材料科學與工程學系; Department of Materials Science and Engineering
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