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公開日期標題作者
1-九月-1993CHARACTERIZATION OF SEMIINSULATING POLYCRYSTALLINE SILICON PREPARED BY LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITIONCHAO, TS; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1993CHARACTERIZATIONS OF OXIDE GROWN BY N2OCHAO, TS; CHEN, WH; SUN, SC; CHANG, HY; 電控工程研究所; Institute of Electrical and Control Engineering
1-三月-1995CROSSOVER PHENOMENON IN OXIDATION RATES OF THE (110) AND (111) ORIENTATIONS OF SILICON IN N2OCHAO, TS; LEI, TF; 電控工程研究所; Institute of Electrical and Control Engineering
1-九月-1995EFFECTS OF POSTETCHING TREATMENTS ON ELECTRICAL CHARACTERISTICS OF THERMAL OXIDES ON REACTIVE-ION-ETCHED SILICON SUBSTRATESCHENG, HC; UENG, SY; WANG, PW; KANG, TK; CHAO, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-1995ELLIPSOMETRIC MEASUREMENTS AND ITS ALIGNMENT - USING THE INTENSITY RATIO TECHNIQUECHAO, YF; WEI, CS; LEE, WC; LIN, SC; CHAO, TS; 交大名義發表; National Chiao Tung University
1-二月-1990ELLIPSOMETRY MEASUREMENT OF THE COMPLEX REFRACTIVE-INDEX AND THICKNESS OF POLYSILICON THIN-FILMSHO, JH; LEE, CL; LEI, TF; CHAO, TS; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-五月-1995FOURIER-TRANSFORM INFRARED SPECTROSCOPIC STUDY OF OXIDE-FILMS GROWN IN PURE N2OCHAO, TS; CHEN, WH; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1995IMPROVEMENT OF THIN OXIDES THERMALLY GROWN ON THE REACTIVE-ION-ETCHED SILICON SUBSTRATESUENG, SY; WANG, PW; KANG, TK; CHAO, TS; CHEN, WH; DAI, BT; CHENG, HC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
16-二月-1995INHIBITION OF BIRDS BEAK IN LOCOS BY NEW BUFFER N2O OXIDECHAO, TS; CHENG, JY; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1994MEASUREMENT OF THIN OXIDE-FILMS ON IMPLANTED SI-SUBSTRATE BY ELLIPSOMETRYCHAO, TS; LEI, TF; CHANG, CY; LEE, CL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1991MEASUREMENT OF ULTRATHIN (LESS-THAN-100-A) OXIDE-FILMS BY MULTIPLE-ANGLE INCIDENT ELLIPSOMETRYCHAO, TS; LEE, CL; LEI, TF; 交大名義發表; 電控工程研究所; National Chiao Tung University; Institute of Electrical and Control Engineering
1-八月-1994MULTIPLE-ANGLE INCIDENT ELLIPSOMETRY MEASUREMENT ON LOW-PRESSURE CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON AND POLYSILICONCHAO, TS; LEE, CL; LEI, TF; 電子工程學系及電子研究所; 奈米中心; Department of Electronics Engineering and Institute of Electronics; Nano Facility Center
1-六月-1995NITRIDATION OF THE STACKED POLY-SI GATE TO SUPPRESS THE BORON PENETRATION IN PMOSLIN, YH; LAI, SC; LEE, CL; LEI, TF; CHAO, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1995A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISHCHENG, JY; LEI, TF; CHAO, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-1995A NOVEL PLANARIZATION OF TRENCH ISOLATION USING POLYSILICON REFILL AND ETCHBACK OF CHEMICAL-MECHANICAL POLISHCHENG, JY; LEI, TF; CHAO, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
4-六月-1992POLY-OXIDE POLY-SI/SIO2/SI STRUCTURE FOR ELLIPSOMETRY MEASUREMENTCHAO, TS; LEE, CL; LEI, TF; YEN, YT; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1995POST-POLYSILICON GATE-PROCESS-INDUCED DEGRADATION ON THIN GATE OXIDELAI, CS; LEI, TF; LEE, CL; CHAO, TS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-五月-1993THE REFRACTIVE-INDEX OF INP AND ITS OXIDE MEASURED BY MULTIPLE-ANGLE INCIDENT ELLIPSOMETRYCHAO, TS; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-1992A STUDY OF THE INTERFACIAL LAYER OF AL AND AL(1-PERCENT SI)-SI CONTACTS USING A ZERO-LAYER ELLIPSOMETRY MODELCHAO, TS; LEE, CL; LEI, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-1994SUPERIOR DAMAGE-IMMUNITY OF THIN OXIDES THERMALLY GROWN ON REACTIVE-ION-ETCHED SILICON SURFACE IN N2O AMBIENTUENG, SY; CHAO, TS; WANG, PJ; CHEN, WH; CHANG, DC; CHENG, HC; 奈米中心; Nano Facility Center
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