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公開日期標題作者
1-十二月-1995A COMPREHENSIVE STUDY OF SUPPRESSION OF BORON PENETRATION BY AMORPHOUS-SI GATE IN P+-GATE PMOS DEVICESLIN, CY; JUAN, KC; CHANG, CY; PAN, FM; CHOU, PF; HUNG, SF; CHEN, LJ; 電控工程研究所; Institute of Electrical and Control Engineering
15-三月-1987CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPE STUDY OF THE GROWTH-KINETICS OF HEXAGONAL MOSI2 ON (001)SICHENG, JY; CHENG, HC; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-五月-1992DIRECT OBSERVATION OF SI DELTA-DOPED GAAS BY TRANSMISSION ELECTRON-MICROSCOPYLIU, DG; FAN, JC; LEE, CP; TSAI, CM; CHANG, KH; LIOU, DC; LEE, TL; CHEN, LJ; 電控工程研究所; Institute of Electrical and Control Engineering
15-八月-1993ELECTRICAL AND MICROSTRUCTURAL CHARACTERISTICS OF TI CONTACTS ON (001)SILIAUH, HR; CHEN, MC; CHEN, JF; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1994ENHANCEMENT OF OXIDE BREAK-UP BY IMPLANTATION OF FLUORINE IN POLY-SI EMITTER CONTACTED P-+-N SHALLOW JUNCTION FORMATIONWU, SL; LEE, CL; LEI, TF; CHEN, CF; CHEN, LJ; HO, KZ; LING, YC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
26-一月-1987GROWTH OF SINGLE-CRYSTALLINE COSI2 ON (111) SI IN SOLID-PHASE EPITAXY REGIME BY A NON-ULTRAHIGH VACUUM METHODCHENG, HC; WU, IC; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1992INFLUENCE OF CONTACT TREATMENTS ON THE ELECTRICAL CHARACTERISTICS OF SHALLOW-JUNCTION TITANIUM-BASED CONTACTSLIAUH, HR; TSENG, MF; CHEN, MC; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-1993INTERFACIAL REACTIONS OF TITANIUM THIN-FILMS ON ION-IMPLANTED (001) SILIAUH, HR; CHEN, MC; CHEN, JF; CHEN, LJ; LUR, W; CHU, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1995INVESTIGATION ON THE DISTRIBUTION OF FLUORINE AND BORON IN POLYCRYSTALLINE SILICON SILICON SYSTEMSCHEN, TP; LEI, TF; CHANG, CY; HSIEH, WY; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1992INVESTIGATION ON THE INTERFACE OF THE POLYCRYSTALLINE SILICON CONTACTED DIODE FORMED WITH A STACKED AMORPHOUS-SILICON FILMWU, SL; LEE, CL; LEI, TF; LEE, TL; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
4-四月-1994LOW-TEMPERATURE GROWTH OF SILICON-BORON LAYER BY ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITIONCHEN, TP; LEI, TF; LIN, HC; CHANG, CY; HSIEH, WY; CHEN, LJ; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-四月-1994NANOMETER THICK SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUECHANG, TC; CHANG, CY; JUNG, TG; TSAI, WC; WANG, PJ; LEE, TL; CHEN, LJ; 電控工程研究所; 奈米中心; Institute of Electrical and Control Engineering; Nano Facility Center
1-十一月-1991PRECISE DETERMINATION OF ALUMINUM CONTENT IN ALGAASCHANG, KH; LEE, CP; WU, JS; LIU, DG; LIOU, DC; WANG, MH; CHEN, LJ; MARAIS, MA; 電控工程研究所; Institute of Electrical and Control Engineering
2-十一月-1992SCHOTTKY-BARRIER HEIGHTS OF THE AMORPHOUS INTERLAYER SI INTERFACES IN TITANIUM THIN-FILMS ON (001)SILIAUH, HR; CHEN, MC; CHEN, JF; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
8-三月-1993SIMULTANEOUS OCCURRENCE OF MULTIPHASES IN THE INTERFACIAL REACTIONS OF ULTRAHIGH-VACUUM DEPOSITED HF AND CR THIN-FILMS ON (111)SIHSIEH, WY; LIN, JH; CHEN, LJ; 交大名義發表; 材料科學與工程學系; National Chiao Tung University; Department of Materials Science and Engineering
1-五月-1994SUPPRESSION OF THE BORON PENETRATION INDUCED SI/SIO2 INTERFACE DEGRADATION BY USING A STACKED-AMORPHOUS-SILICON FILM AS THE GATE STRUCTURE FOR PMOSFETWU, SL; LEE, CL; LEI, TF; CHEN, JF; CHEN, LJ; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 16 筆資料，總共 16 筆