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公開日期
標題
作者
2014
1奈米等效厚度之氧化鑭與氧化鉿複合氧化物材料在砷化銦鎵金氧半元件之研究
侯姿清
;
Hou, Tzu-Ching
;
張翼
;
馬哲申
;
Chang, Edward-Yi
;
Maa, Jer-shen
;
光電系統研究所
6-六月-2018
Analysis of Leakage Current Mechanism for Ni/Au Schottky Contact on InAlGaN/GaN HEMT
Lumbantoruan, Franky
;
Wu, Chia-Hsun
;
Zheng, Xia-Xi
;
Singh, Sankalp K.
;
Dee, Chang-Fu
;
Majlis, Burhanuddin Y.
;
Chang, Edward-Yi
;
材料科學與工程學系
;
國際半導體學院
;
Department of Materials Science and Engineering
;
International College of Semiconductor Technology
1-一月-2017
BUFFER-OPTIMIZED IMPROVEMENT IN RF LOSS OF ALGAN/GAN HEMTS ON 4-INCH SILICON (111)
Luong, Tien Tung
;
Lumbantoruan, Franky
;
Chen, Yen-Yu
;
Ho, Yen-Teng
;
Lin, Yueh-Chin
;
Chang, Shane
;
Chang, Edward-Yi
;
材料科學與工程學系
;
電機學院
;
Department of Materials Science and Engineering
;
College of Electrical and Computer Engineering
1-一月-2013
Characterization of Al2O3/ZnO Grown on Si Substrate by Plasma Enhanced Atomic Layer Deposition
Chung, Chen-Chen
;
Tran, Binh-Tinh
;
Lin, Kung-Liang
;
Wang, Ching-Chiun
;
Chen, Chien-Chih
;
Huang, Chih-Yung
;
Lee, Sheng-Lang
;
Chang, Edward-Yi
;
材料科學與工程學系
;
Department of Materials Science and Engineering
1-二月-2013
Characterization of AlInN Layer Grown on GaN/Sapphire Substrate by MOCVD
Huang, Wei-Ching
;
Chang, Edward-Yi
;
Wong, Yuen-Yee
;
Lin, Kung-Liang
;
Hsiao, Yu-Lin
;
Dee, Chang Fu
;
Majlis, Burhanuddin Yeop
;
材料科學與工程學系
;
Department of Materials Science and Engineering
2010
A Cu-Metallized InGaP/GaAs Heterojunction Bipolar Transistor with Reliable Pd/Ge/Cu Ohmic Contact for Power Applications
Huang, Jui-Chien
;
Lin, Yueh-Chin
;
Tseng, Yu-Ling
;
Chen, Ke-Shian
;
Lu, Po-Chin
;
Lin, Mong-E
;
Chang, Edward-Yi
;
材料科學與工程學系
;
Department of Materials Science and Engineering
1-九月-2006
Double delta-doped enhancement-mode InGaP/AlGaAs/InGaAs pseudomorphic high electron mobility transistor for linearity application
Chu, Li-Hsin
;
Hsu, Heng-Tung
;
Chang, Edward-Yi
;
Lee, Tser-Lung
;
Chen, Sze-Hung
;
Lien, Yi-Chung
;
Chang, Chun-Yen
;
材料科學與工程學系
;
電子工程學系及電子研究所
;
Department of Materials Science and Engineering
;
Department of Electronics Engineering and Institute of Electronics
2008
Effect of Graded AlxGa1-xN Interlayer Buffer on the Strain of GaN Grown on Si (111) Using MOCVD Method
Lin, KungLiang
;
Chang, Edward-Yi
;
Li, Tingkai
;
Huang, Wei-Ching
;
Hsiao, Yu-Lin
;
Tweet, Douglas
;
Maa, Jer-shen
;
Hsu, Sheng-Teng
;
材料科學與工程學系
;
Department of Materials Science and Engineering
1-七月-2014
Effect of Low Temperature Ge Seed Layer and Post Thermal Annealing on Quality of Ge1-xSix (0.05 <= x <= 0.1) Graded Buffer Layers by UHV-CVD
Chi-Lang Nguyen
;
Nguyen Hong Quan
;
Binh-Tinh Tran
;
Su, Yung-Hsuan
;
Tang, Shih-Hsuan
;
Luo, Guang-Li
;
Chang, Edward-Yi
;
材料科學與工程學系
;
電子工程學系及電子研究所
;
奈米中心
;
Department of Materials Science and Engineering
;
Department of Electronics Engineering and Institute of Electronics
;
Nano Facility Center
二月-2016
The Effect of the Thickness of the Low Temperature AlN Nucleation Layer on the Material Properties of GaN Grown on a Double-Step AlN Buffer Layer by the MOCVD Method
Huang, Wei-Ching
;
Chu, Chung-Ming
;
Hsieh, Chi-Feng
;
Wong, Yuen-Yee
;
Chen, Kai-Wei
;
Lee, Wei-I
;
Tu, Yung-Yi
;
Chang, Edward-Yi
;
Dee, Chang Fu
;
Majlis, B. Y.
;
Yap, S. L.
;
材料科學與工程學系
;
電機學院
;
Department of Materials Science and Engineering
;
College of Electrical and Computer Engineering
1-五月-2010
Effects of Al(x)Ga(1-x)N interlayer for GaN epilayer grown on Si substrate by metal-organic chemical-vapor deposition
Lin, Kung-Liang
;
Chang, Edward-Yi
;
Hsiao, Yu-Lin
;
Huang, Wei-Ching
;
Luong, Tien-Tung
;
Wong, Yuen-Yee
;
Li, Tingkai
;
Tweet, Doug
;
Chiang, Chen-Hao
;
材料科學與工程學系
;
電子物理學系
;
Department of Materials Science and Engineering
;
Department of Electrophysics
1-十月-2017
Effects of NH3 Flow Rate During AlGaN Barrier Layer Growth on the Material Properties of AlGaN/GaN HEMT Heterostructure
Lumbantoruan, Franky J.
;
Wong, Yuen-Yee
;
Huang, Wei-Ching
;
Yu, Hung-Wei
;
Chang, Edward-Yi
;
材料科學與工程學系
;
國際半導體學院
;
Department of Materials Science and Engineering
;
International College of Semiconductor Technology
1-九月-2020
Effects of the growth temperature on structural and electrical properties of AlN/GaN heterostructures grown by metal organic chemical vapor deposition
Zheng, Xia-Xi
;
Lin, Chun-Hsiung
;
Ueda, Daisuke
;
Chang, Edward-Yi
;
交大名義發表
;
材料科學與工程學系
;
電子工程學系及電子研究所
;
National Chiao Tung University
;
Department of Materials Science and Engineering
;
Department of Electronics Engineering and Institute of Electronics
1-十二月-2009
Evaluation of Cu-bumps with lead-free solders for flip-chip package applications
Lin, Kung-Liang
;
Chang, Edward-Yi
;
Shih, Lin-Chi
;
材料科學與工程學系
;
Department of Materials Science and Engineering
1-七月-2012
Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell
Tran, Binh-Tinh
;
Chang, Edward-Yi
;
Trinh, Hai-Dang
;
Lee, Ching-Ting
;
Sahoo, Kartika Chandra
;
Lin, Kung-Liang
;
Huang, Man-Chi
;
Yu, Hung-Wei
;
Luong, Tien-Tung
;
Chung, Chen-Chen
;
Nguyen, Chi-Lang
;
材料科學與工程學系
;
Department of Materials Science and Engineering
1-七月-2009
Fabrication of Antireflective Sub-Wavelength Structures on Silicon Nitride Using Nano Cluster Mask for Solar Cell Application
Sahoo, Kartika Chandra
;
Lin, Men-Ku
;
Chang, Edward-Yi
;
Lu, Yi-Yao
;
Chen, Chun-Chi
;
Huang, Jin-Hua
;
Chang, Chun-Wei
;
材料科學與工程學系
;
Department of Materials Science and Engineering
1-一月-2013
Growth and Fabrication of GaN Light Emitting Diode on Patterned-Sapphire Substrate
Binh-Tinh Tran
;
Ming, Chen-Hauw
;
Lin, Kung-Liang
;
Chen, Hao-Ming
;
Wang, Ching-Chian
;
Chen, Chien-Chih
;
Huang, Chih-Yung
;
Chung, Chen-Chen
;
Chang, Edward-Yi
;
工學院
;
College of Engineering
26-十一月-2007
Growth of GaN film on 150 mm Si (111) using multilayer AlN/AlGaN buffer by metal-organic vapor phase epitaxy method
Lin, Kung-Liang
;
Chang, Edward-Yi
;
Hsiao, Yu-Lin
;
Huang, Wei-Ching
;
Li, Tingkai
;
Tweet, Doug
;
Maa, Jer-Shen
;
Hsu, Sheng-Teng
;
Lee, Ching-Ting
;
材料科學與工程學系
;
Department of Materials Science and Engineering
1-九月-2014
Growth of GaN films on circle array patterned Si (111) substrates
Lin, Kung-Liang
;
Binh Tinh Tran
;
Chung, Chen-Chen
;
Chang, Edward-Yi
;
材料科學與工程學系
;
Department of Materials Science and Engineering
1-十一月-2011
Growth of High-Quality In(0.4)Ga(0.6)N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
Binh-Tinh Tran
;
Chang, Edward-Yi
;
Lin, Kung-Liang
;
Wong, Yuen-Yee
;
Sahoo, Kartika Chandra
;
Lin, Hsiao-Yu
;
Huang, Man-Chi
;
Hong-Quan Nguyen
;
Lee, Ching-Ting
;
Hai-Dang Trinh
;
材料科學與工程學系
;
電子工程學系及電子研究所
;
Department of Materials Science and Engineering
;
Department of Electronics Engineering and Institute of Electronics