Evaluation of Cu-bumps with lead-free solders for flip-chip package applications

Abstract

Low cost electroplated Cu-bump with environmental friendly Sn solder was developed for flip-chip applications. The seed layer used was Ti/WN(x)/Ti/Cu where WN(x) was used as the Cu diffusion barrier and Ti was used to enhance the adhesion between bump and the chip pad. Thick negative photoresist (THB JSR-151N) with a high aspect ratio of 2.4 was used for electroplating of copper bump and Sn solder. The Sn solder cap was reflowed at 225 degrees for 6 min at N(2) atmosphere. No wetting phenomenon was observed for the Sn solder as evaluated by energy-dispersed spectroscopy (EDS). The Cu-bump with Ti/WN(x)/Ti/Cu seed layer not only have higher shear force than the Cu-bump with Ti/Cu seed layer but also has higher resistance to fatigue failure than the Au, SnCu, SnAg bumps. (C) 2009 Elsevier B.V. All rights reserved.