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Issue DateTitleAuthor(s)
15-May-20033-disjoint gamma interconnection networksChen, CW; Lu, NP; Chung, CP; 資訊工程學系; Department of Computer Science
1-Feb-2002Anisotropic O 2p-Mn 3d unoccupied states in La1-xMnO3: an X-ray absorption spectroscopy studyLin, JY; Chen, CW; Liu, YC; Liu, SJ; Wu, KH; Gou, YS; Chen, JM; 物理研究所; Institute of Physics
1-Jun-2005Application and robustness design of fuzzy controller for resonant and chaotic systems with external disturbanceHsiao, FH; Chiang, WL; Chen, CW; Xu, SD; Wu, SL; 電控工程研究所; Institute of Electrical and Control Engineering
2006Augmented stereo panoramasChen, CW; Chan, LW; Tsai, YP; Hung, YP; 資訊工程學系; Department of Computer Science
2004CMP of low-k methylsilsesquiazane with oxygen plasma treatment for multilevel interconnect applicationsChang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-Jan-2004CMP of ultra low-k material porous-polysilazane (PPSZ) for interconnect applicationsChang, TC; Tsai, TM; Liu, PT; Chen, CW; Yan, ST; Aoki, H; Chang, YC; Tseng, T; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
22-Dec-2004Cu-penetration induced breakdown mechanism for a-SiCNChen, CW; Liu, PT; Chang, TC; Yang, JH; Tsai, TM; Wu, HH; Tseng, TY; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
1-Aug-2005Damage effect of fluorine implantation on PECVD alpha-SiOC barrier dielectricYang, FM; Chang, TC; Liu, PT; Chen, CW; Tai, YH; Lou, JC; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
2005Deep sub-micron strained Si0.85Ge0.15 channel p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) with ultra-thin N2O-annealed SiN gate dielectricChen, CW; Chien, CH; Chen, YC; Hsu, SL; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20-Mar-1999A design approach to the multi-objective facility layout problemChen, CW; Sha, DY; 工業工程與管理學系; Department of Industrial Engineering and Management
1-Oct-2005Designing a disjoint paths interconnection network with fault tolerance and collision solvingChen, CW; Chung, CP; 資訊工程學系; Department of Computer Science
17-Nov-2003Dielectric characteristics of low-permittivity silicate using electron beam direct patterning for intermetal dielectric applicationsLiu, PT; Chang, TC; Tsai, TM; Lin, ZW; Chen, CW; Chen, BC; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-May-2003Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technologyChang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tsengb, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2003Direct Patterning of low-k hydrogen silsesquioxane using X-ray exposure technology (vol 6, pg G69, 2003)Chang, TC; Tsai, TM; Liu, PT; Mor, YS; Chen, CW; Sheu, JT; Tseng, TY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Nov-2001The effect of ammonia plasma treatment on low-k methyl-hybrido-silsesquioxane against photoresist stripping damageChang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jul-2002Effective repair to ultra-low-k dielectric material (k-2.0) by hexamethyidisilazane treatmentMor, YS; Chang, TC; Liu, PT; Tsai, TM; Chen, CW; Yan, ST; Chu, CJ; Wu, WF; Pan, FM; Lur, W; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-2002Effective strategy for porous organosilicate to suppress oxygen ashing damageLiu, PT; Chang, TC; Mor, YS; Chen, CW; Tsai, TM; Chu, CJ; Pan, FM; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-2001Effectiveness of NH3 plasma treatment in preventing wet stripper damage to low-k hydrogen silsesquioxane (HSQ)Chang, TC; Mor, YS; Liu, PT; Tsai, TM; Chen, CW; Mei, YJ; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Effects of oxygen plasma ashing on barrier dielectric SiCN filmChen, CW; Chang, TC; Liu, PT; Tsai, TM; Tseng, TY; 電子工程學系及電子研究所; 光電工程學系; 顯示科技研究所; Department of Electronics Engineering and Institute of Electronics; Department of Photonics; Institute of Display
2006Effects of postdeposition annealing on the characteristics of HfOxNy dielectrics on germanium and silicon substratesCheng, CC; Chien, CH; Chen, CW; Hsu, SL; Yang, CH; Chang, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 20 of 61  next >