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顯示 1 到 7 筆資料，總共 7 筆
公開日期標題作者
1-二月-2020Abnormal High Resistive State Current Mechanism Transformation in Ti/HfO2/TiN Resistive Random Access MemoryZhou, Kuan-Ju; Chang, Ting-Chang; Lin, Chih-Yang; Chen, Chun-Kuei; Tseng, Yi-Ting; Zheng, Hao-Xuan; Chen, Hong-Chih; Sun, Li-Chuan; Lien, Chih-Ying; Tan, Yung-Fang; Wu, Chung-Wei; Yeh, Yu-Hsuan; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-三月-2020A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memoryLin, Chih-Yang; Chang, Ting-Chang; Pan, Chih-Hung; Chen, Min-Chen; Xu, You-Lin; Tan, Yung-Fang; Wu, Pei-Yu; Chen, Chun-Kuei; Huang, Wei-Chen; Lin, Yun-Hsuan; Chao, Yu-Ting; Shou, Cheng-Yun; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2018The Demonstration of Increased Selectivity During Experimental Measurement in Filament-Type Vanadium Oxide-Based SelectorChen, Chun-Kuei; Lin, Chih-Yang; Chen, Po-Hsun; Chang, Ting-Chang; Shih, Chih-Cheng; Tseng, Yi-Ting; Zheng, Hao-Xuan; Chen, Ying-Chen; Chang, Yao-Feng; Lin, Chun-Chu; Huang, Hui-Chun; Huang, Wei-Chen; Wang, Hao; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2019Investigating Material Changes at Different Gadolinium Doping Power Levels in Indium-Tin Oxide Intended for Use as an Insulator in Resistive Switching MemoryLin, Chun-Chu; Chen, Po-Hsun; Chen, Min-Chen; Chang, Ting-Chang; Lin, Chih-Yang; Zheng, Hao-Xuan; Chen, Chun-Kuei; Huang, Wei-Chen; Chen, Wen-Chung; Huang, Hui-Chun; Tsai, Tsung-Ming; Ma, Xiao-Hua; Hao, Yue; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2019LiSiOX-Based Analog Memristive Synapse for Neuromorphic ComputingChen, Jia; Lin, Chih-Yang; Li, Yi; Qin, Chao; Lu, Ke; Wang, Jie-Ming; Chen, Chun-Kuei; He, Yu-Hui; Chang, Ting-Chang; Sze, Simon M.; Miao, Xiang-Shui; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2018Reducing Forming Voltage by Applying Bipolar Incremental Step Pulse Programming in a 1T1R Structure Resistance Random Access MemoryZheng, Hao-Xuan; Chang, Ting-Chang; Xue, Kan-Hao; Su, Yu-Ting; Wu, Cheng-Hsien; Shih, Chih-Cheng; Tseng, Yi-Ting; Chen, Wen-Chung; Huang, Wei-Chen; Chen, Chun-Kuei; Miao, Xiang-Shui; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011使用Fuzzy Q-learning達成具公平性動態頻寬分配的MPLS-TP環陳俊魁; Chen, Chun-Kuei; 張仲儒; Chang, Chung-Ju; 電機學院通訊與網路科技產業專班
顯示 1 到 7 筆資料，總共 7 筆