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公開日期標題作者
1-一月-2006Advanced electrical imaging of dislocations in Mg-In-codoped GaN filmsChen, SH; Hou, SP; Hsieh, JH; Chang, FC; Chen, WK; 電子物理學系; Department of Electrophysics
2-九月-2002Characteristics of deep levels in As-implanted GaN filmsLee, L; Lee, WC; Chung, HM; Lee, MC; Chen, WH; Chen, WK; Lee, HY; 電子物理學系; Department of Electrophysics
2000Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structuresLin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC; 光電工程學系; Department of Photonics
1-十二月-2002Characteristics of p-type GaN films doped with isoelectronic indium atomsChang, FC; Shen, KC; Chung, HM; Lee, MC; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
15-五月-1997Crystalline structure changes in GaN films grown at different temperaturesLin, HC; Ou, J; Chen, WK; Chen, WH; Lee, MC; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
15-二月-2000Date attachable electronic cashFan, CI; Chen, WK; Yeh, YS; 資訊工程學系; Department of Computer Science
15-九月-1996Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramicLee, WI; Young, RL; Chen, WK; 電子物理學系; Department of Electrophysics
15-九月-1996Deep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramicLee, WI; Young, RL; Chen, WK; 交大名義發表; 友訊交大聯合研發中心; National Chiao Tung University; D Link NCTU Joint Res Ctr
1-八月-2002Dependence of deep level concentrations on ammonia flow rate in n-type GaN filmsLee, L; Chang, FC; Chung, HM; Lee, MC; Chen, WH; Chen, WK; Huang, BR; 電子物理學系; Department of Electrophysics
2000Effects in carrier dynamics of Isolectronic In doped in GaN films grown by metalorganic vapor phase epitaxyHuang, HY; Shu, CK; Lin, WC; Liao, KC; Chuang, CH; Lee, MC; Chen, WH; Chen, WK; Lee, YY; 電子物理學系; Department of Electrophysics
1-十月-1996Effects of growth temperature on solid incorporation of AlAs1-xSbx using tertiarybutylarsine as arsenic source precursorChen, WK; Ou, JH; Hsu, CH; 電子物理學系; Department of Electrophysics
1-十月-1996Effects of growth temperature on solid incorporation of AlAs1-xSbx using tertiarybutylarsine as arsenic source precursorChen, WK; Ou, JH; Hsu, CH; 交大名義發表; 電子物理學系; National Chiao Tung University; Department of Electrophysics
1998The effects of isoelectronic in-doping in GaN films grown by MOCVDShu, CK; Ou, J; Lin, HC; Pan, YC; Lee, WH; Chen, WK; Lee, MC; 電子物理學系; Department of Electrophysics
15-三月-2001Effects of thermal annealing on Ni/Ta/n-GaN Schottky diodesChen, GL; Chang, FC; Chung, WC; Huang, BR; Chen, WH; Lee, MC; Chen, WK; 電子物理學系; Department of Electrophysics
1-五月-2001Electrical properties of the free-standing diamond film at high voltagesHuang, BR; Ke, WC; Chen, WK; 電子物理學系; Department of Electrophysics
2000The electronic structure and optical properties of phosphorus implanted GaN filmsShu, CK; Lee, WH; Huang, HY; Chuang, CH; Chen, WK; Chen, WH; Lee, MC; 電子物理學系; Department of Electrophysics
1-六月-1998An elucidation of solid incorporation of InGaN grown by metalorganic vapor phase epitaxyOu, J; Chen, WK; Lin, HC; Pan, YC; Lee, MC; 電子物理學系; Department of Electrophysics
1-七月-2002Formation of self-assembled ZnTe quantum dots on ZnSe buffer layer grown on GaAs substrate by molecular beam epitaxyKuo, MC; Yang, CS; Tseng, PY; Lee, J; Shen, JL; Chou, WC; Shih, YT; Ku, CT; Lee, MC; Chen, WK; 電子物理學系; Department of Electrophysics
15-六月-2004Formation of self-organized GaN dots on Al0.11Ga0.89N by alternating supply of source precursorsKe, WC; Huang, HY; Ku, CS; Yen, KH; Lee, L; Chen, WK; Chou, WC; Lee, MC; Chen, WH; Lin, WJ; Cheng, YC; Cherng, YT; 電子物理學系; Department of Electrophysics
2000Gallium K-edge EXAFS study of GaN : Mg filmsPan, YC; Wang, SF; Lee, WH; Lin, WC; Shu, CK; Chiang, CI; Lin, CH; Chang, H; Lee, JF; Jang, LY; Lin, DS; Lee, MC; Chen, WH; Chen, WK; 電子物理學系; Department of Electrophysics
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