瀏覽 的方式: 作者 Chen, William P. N.

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公開日期標題作者
2007Accurate modeling and characterization of mobility in tensile and compressive stress for state-of-the-art manufacturing NMOSFETsWang, J. -S.; Chen, William P. N.; Shih, C. -H.; Lien, C.; Su, Pin; Sheu, Y. M.; Chao, Donald Y. -S.; Goto, K.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2011Experimental Investigation of Surface-Roughness-Limited Mobility in Uniaxial Strained pMOSFETsChen, William P. N.; Kuo, Jack J. Y.; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2008Impact of process-induced strain on Coulomb scattering mobility in short-channel n-MOSFETsChen, William P. N.; Su, Pin; Goto, K.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2010Impact of Process-Induced Uniaxial Strain on the Temperature Dependence of Carrier Mobility in Nanoscale pMOSFETsChen, William P. N.; Kuo, Jack J. Y.; Su, Pin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2006A new series resistance and mobility extraction method by BSIM model for nano-scale MOSFETsChen, William P. N.; Su, P.; Wang, J. S.; Lien, C. H.; Chang, C. H.; Goto, K.; Diaz, C. H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics