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公開日期標題作者
2009The Characteristics and Control of Body-to-Body Leakage Current in PD-SOILo, H. C.; Luo, W. C.; Lu, W. Y.; Cheng, C. F.; Chen, T. L.; Lien, C. H.; Fung, S. K. H.; Wu, C. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2008Comparison of MONOS memory device integrity when using Hf(1-x-y)N(x)O(y) trapping layers with different N compositionsYang, H. J.; Cheng, C. F.; Chen, W. B.; Lin, S. H.; Yeh, F. S.; McAlister, Sean P.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2007HtLaON n-MOSFETs using a low work function HfSix gateCheng, C. F.; Wu, C. H.; Su, N. C.; Wang, S. J.; McAlister, S. P.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2008PD-SOI MOSFET Body-to-Body Leakage Scaling Trend and OptimizationLo, H. C.; Luo, W. C.; Lu, W. Y.; Cheng, C. F.; Wu, Benny; Chen, T. L.; Lien, C. H.; Fung, Samuel K. H.; Tuan, H. C.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2007A program-erasable high-k Hf0.3N0.2O0.5 MIS capacitor with good retentionYang, H. J.; Chin, Albert; Chen, W. J.; Cheng, C. F.; Huang, W. L.; Hsieh, I. J.; McAlister, S. P.; 奈米科技中心; Center for Nanoscience and Technology
2007Very low V(t) [Ir-Hf]/HfLaO CMOS using novel self-aligned low temperature shallow junctionsCheng, C. F.; Wu, C. H.; Su, N. C.; Wang, S. J.; McAlister, S. P.; Chin, Albert; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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