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公開日期標題作者
2004Carrier transportation of rapid thermal annealed CeO2 gate dielectricsWang, JC; Chiang, KC; Lei, TF; Lee, CL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Characteristics improvement and carrier transportation of CeO2 gate dielectrics with rapid thermal annealingWang, JC; Chiang, KC; Lei, TF; Lee, CL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2005High-kappa Ir/TiTaO/TaN capacitors suitable for analog IC applicationsChiang, KC; Huang, CC; Chin, A; Chen, WJ; McAlister, SP; Chiu, HF; Chen, JR; Chi, CC; 奈米科技中心; Center for Nanoscience and Technology
1-六月-2005High-performance poly-silicon TFTs incorporating LaAlO3 as the gate dielectricHung, BF; Chiang, KC; Huang, CC; Chin, A; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Low noise and high gain RF MOSFETs on plastic substratesKao, HL; Chin, A; Huang, CC; Hung, BF; Chiang, KC; Lai, ZM; McAlister, SP; Chi, CC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Low voltage high speed SiO(2)/AlGaN/AlLaO(3)/TaN memory with good retentionChin, A; Laio, CC; Chen, C; Chiang, KC; Yu, DS; Yoo, WJ; Samudra, GS; Wang, T; Hsieh, IJ; McAlister, SP; Chi, CC; 電機學院; College of Electrical and Computer Engineering
2005Modeling RF MOSFETs after electrical stress using low-noise microstrip line layoutKao, HL; Chin, A; Lai, JM; Lee, CF; Chiang, KC; McAlister, SP; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Novel SiO2/AlN/HfAlO/IrO2 memory with fast erase, large triangle V-th and good retentionLai, CH; Chin, A; Chiang, KC; Yoo, WJ; Cheng, CF; McAlister, SP; Chi, CC; Wu, P; 電機學院; College of Electrical and Computer Engineering
2005Very high density RF MIM capacitor compatible with VLSIChiang, KC; Lai, CH; Chin, A; Kao, HL; McAlister, SP; Chi, CC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2005Very high kappa and high density TiTaO MIM capacitors for analog and RF applicationsChiang, KC; Chin, A; Lai, CH; Chen, WJ; Cheng, CF; Hung, BF; Liao, CC; 電機學院; College of Electrical and Computer Engineering
1-十月-2005Very high-density (23 fF/mu m(2)) RF MIM capacitors using high-k TaTiO as the dielectricChiang, KC; Lai, CH; Chin, A; Wang, TJ; Chiu, HF; Chen, JR; McAlister, SP; Chi, CC; 奈米科技中心; Center for Nanoscience and Technology