瀏覽 的方式: 作者 Chiang, Kuang-Hao

跳到: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字:  
顯示 1 到 5 筆資料,總共 5 筆
公開日期標題作者
1-一月-2017A Comprehensive Study of 3-stage High Resistance State Retention Behavior for TMO ReRAMs from Single Cells to a Large ArrayLin, Yu-Hsuan; Ho, Yung-Han; Lee, Ming-Hsiu; Wang, Chao-Hung; Lin, Yu-Yu; Lee, Feng-Ming; Hsu, Kai-Chieh; Tseng, Po-Hao; Lee, Dai-Ying; Chiang, Kuang-Hao; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018Excellent High Temperature Retention of TiOXNV ReRAM by Interfacial Layer EngineeringLin, Yu-Hsuan; Lee, Dai-Ying; Wang, Chao-Hung; Lee, Ming-Hsiu; Ho, Yung-Han; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016Excellent Resistance Variability Control of WOx ReRAM by a Smart Writing AlgorithmLin, Yu-Hsuan; Wu, Jau-Yi; Lee, Ming-Hsiu; Wang, Tien-Yen; Lin, Yu-Yu; Lee, Feng-Ming; Lee, Dai-Ying; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Hsieh, Kuang-Yeu; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
十一月-2016A Novel Varying-Bias Read Scheme for MLC and Wide Temperature Range TMO ReRAMLin, Yu-Hsuan; Lee, Ming-Hsiu; Wu, Jau-Yi; Lin, Yu-Yu; Lee, Feng-Ming; Lee, Dai-Ying; Chiang, Kuang-Hao; Lai, Erh-Kun; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2012Threshold Vacuum Switch (TVS) on 3D-Stackable and 4F(2) Cross-Point Bipolar and Unipolar Resistive Random Access MemoryHo, ChiaHua; Huang, Hsin-Hau; Lee, Ming-Taou; Hsu, Cho-Lun; Lai, Tung-Yen; Chiu, Wen-Cheng; Lee, Meiyi; Chou, Tong-Huan; Yang, Ivy; Chen, Min-Cheng; Wu, Cheng-San; Chiang, Kuang-Hao; Yao, Yong-Der; Hu, Chenming; Yang, Fu-Liang; 交大名義發表; National Chiao Tung University