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1-二月-2012A Comparative Study of NBTI and RTN Amplitude Distributions in High-kappa Gate Dielectric pMOSFETsChiu, J. P.; Chung, Y. T.; Wang, Tahui; Chen, Min-Cheng; Lu, C. Y.; Yu, K. F.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Investigation of Post-NBT Stress Current Instability Modes in HfSiON Gate Dielectric pMOSFETs by Measurement of Individual Trapped Charge EmissionsMa, H. C.; Chiu, J. P.; Tang, C. J.; Wang, Tahui; Chang, C. S.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Program Charge Effect on Random Telegraph Noise Amplitude and Its Device Structural Dependence in SONOS Flash MemoryChiu, J. P.; Chou, Y. L.; Ma, H. C.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2009Program Trapped-Charge Effect on Random Telegraph-Noise Amplitude in a Planar SONOS Flash Memory CellMa, H. C.; Chou, Y. L.; Chiu, J. P.; Wang, Tahui; Ku, S. H.; Zou, N. K.; Chen, Vincent; Lu, W. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2010Use of Random Telegraph Signal as Internal Probe to Study Program/Erase Charge Lateral Spread in a SONOS Flash MemoryChou, Y. L.; Chiu, J. P.; Ma, H. C.; Wang, Tahui; Chao, Y. P.; Chen, K. C.; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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