1. 目前位置：

瀏覽 的方式： 作者 Chiu, SY

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 12 筆資料，總共 12 筆
公開日期標題作者
1-五月-2005Aplication of plasma immersion ion implantation on seeding copper electroplating for multilevel interconnectionChiu, SY; Wang, YL; Chang, SC; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
15-十一月-2003The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layerChiu, SY; Wang, YL; Liu, CP; Lan, JK; Ay, C; Feng, MS; Tsai, MS; Dai, BT; 材料科學與工程學系; Department of Materials Science and Engineering
1-十一月-2000Characterization of additive systems for damascene Cu electroplating by the superfilling profile monitorChiu, SY; Shieh, JM; Chang, SC; Lin, KC; Dai, BT; 材料科學與工程學系; Department of Materials Science and Engineering
1-三月-2002Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurryHsu, JW; Chiu, SY; Tsai, MS; Dai, BT; Feng, MS; Shih, HC; 材料科學與工程學系; Department of Materials Science and Engineering
1-三月-2006High-selectivity damascene chemical mechanical polishingChiu, SY; Wang, YL; Liu, CP; Chang, SC; Hwang, GJ; Feng, MS; Chen, CF; 材料科學與工程學系; Department of Materials Science and Engineering
15-十月-1999Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishingHu, TC; Chiu, SY; Dai, BT; Tsai, MS; Tung, IC; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
2002Providing mobile LAN access capability for bluetooth devicesChiu, SY; Chang, HP; Chang, RC; 資訊工程學系; Department of Computer Science
1-三月-2002The removal selectivity of titanium and aluminum in chemical mechanical planarizationHsu, JW; Chiu, SY; Wang, YL; Dai, BT; Tsai, MS; Feng, MS; Shih, HC; 材料科學與工程學系; Department of Materials Science and Engineering
1999A study on electrochemical metrologies for evaluating the removal selectivity of AlCMPChiu, SY; Hsu, JW; Tung, IC; Shih, HC; Feng, MS; Tsai, MS; Dai, BT; 材料科學與工程學系; Department of Materials Science and Engineering
1-十二月-2000Study the impact of liner thickness on the 0.18 mu m devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectricLan, JK; Wang, YL; Wu, YL; Liou, HC; Wang, JK; Chiu, SY; Cheng, YL; Feng, MS; 交大名義發表; National Chiao Tung University
1-六月-1996Temperature-dependent transport properties of n(+) GaAs/low-temperature GaAs/n(+) GaAs structures grown by molecular beam epitaxyChen, JF; Chen, NC; Chiu, SY; Wang, PY; Lee, WI; Chin, A; 電子物理學系; 電子工程學系及電子研究所; Department of Electrophysics; Department of Electronics Engineering and Institute of Electronics
1-六月-1996Temperature-dependent transport properties of n(+) GaAs/low-temperature GaAs/n(+) GaAs structures grown by molecular beam epitaxyChen, JF; Chen, NC; Chiu, SY; Wang, PY; Lee, WI; Chin, A; 電子物理學系; Department of Electrophysics
顯示 1 到 12 筆資料，總共 12 筆