瀏覽 的方式: 作者 Diaz, Carlos H.

跳到: 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字:  
顯示 1 到 7 筆資料,總共 7 筆
公開日期標題作者
1-八月-2020Design Space Analysis for Cross-Point 1S1MTJ MRAM: Selector-MTJ CooptimizationChiang, Hung-Li; Chen, Tzu-Chiang; Song, Ming-Yuan; Chen, Yu-Sheng; Chiu, Jung-Piao; Chiang, Katherine; Manfrini, Mauricio; Cai, Jin; Gallagher, William J.; Wang, Tahui; Diaz, Carlos H.; Wong, H. -S. Philip; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-五月-2013Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing TemperaturesHai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-十月-2013Electrical Characterization and Materials Stability Analysis of La2O3/HfO2 Composite Oxides on n-In0.53Ga0.47As MOS Capacitors With Different Annealing TemperaturesLin, Yueh Chin; Trinh, Hai Dang; Chuang, Ting Wei; Iwai, Hiroshi; Kakushima, Kuniyuki; Ahmet, Parhat; Lin, Chun Hsiung; Diaz, Carlos H.; Chang, Hui Chen; Jang, Simon M.; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-四月-2014Low interface trap density Al2O3/In0.53Ga0.47As MOS capacitor fabricated on MOCVD-grown InGaAs epitaxial layer on Si substrateLin, Yueh-Chin; Huang, Mao-Lin; Chen, Chen-Yu; Chen, Meng-Ku; Lin, Hung-Ta; Tsai, Pang-Yan; Lin, Chun-Hsiung; Chang, Hui-Cheng; Lee, Tze-Liang; Lo, Chia-Chiung; Jang, Syun-Ming; Diaz, Carlos H.; Hwang, He-Yong; Sun, Yuan-Chen; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-九月-2008A millisecond-anneal-assisted selective fully silicided (FUSI) gate processLin, Da-Wen; Wang, Maureen; Cheng, Ming-Lung; Sheu, Yi-Ming; Tarng, Bennet; Chu, Che-Min; Nieh, Chun-Wen; Lo, Chia-Ping; Tsai, Wen-Chi; Lin, Rachel; Wang, Shyh-Wei; Cheng, Kuan-Lun; Wu, Chii-Ming; Lei, Ming-Ta; Wu, Chung-Cheng; Diaz, Carlos H.; Chen, Ming-Jer; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2006Reproducing subthreshold characteristics of metal-oxide-semiconductor field effect transistors under shallow trench isolation mechanical stress using a stress-dependent diffusion modelSheu, Yi-Ming; Yang, Sheng-Jier; Wang, Chih-Chiang; Chang, Chih-Sheng; Chen, Ming-Jer; Liu, Sally; Diaz, Carlos H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Series Resistance and Mobility Extraction Method in Nanoscale MOSFETsChen, William Po-Nien; Su, Pin; Goto, Ken-Ichi; Diaz, Carlos H.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics