A millisecond-anneal-assisted selective fully silicided (FUSI) gate process

標題:	A millisecond-anneal-assisted selective fully silicided (FUSI) gate process
作者:	Lin, Da-Wen Wang, Maureen Cheng, Ming-Lung Sheu, Yi-Ming Tarng, Bennet Chu, Che-Min Nieh, Chun-Wen Lo, Chia-Ping Tsai, Wen-Chi Lin, Rachel Wang, Shyh-Wei Cheng, Kuan-Lun Wu, Chii-Ming Lei, Ming-Ta Wu, Chung-Cheng Diaz, Carlos H. Chen, Ming-Jer 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
關鍵字:	fully silicided (FUSI);millisecond-anneal (NISA);MOSFET
公開日期:	1-九月-2008
摘要:	We demonstrate, for the first time, an integration-friendly selective PMOSFET fully silicided (FUSI) gate process. In this process, a millisecond-anneal (NISA) technique is utilized for the nickel silicide phase transformation. A highly tensile FUSI gate electrode is created and hence exerts compressive stress in the underlying channel. The highly flexible integration scheme successfully, and exclusively, implements uniform P+ FUSI gates for PMOSFETs while preserving a FUSI-free N+ poly-Si gate for PMOSFETs with the feature size down to 30 run. A 20% improvement in FUSI-gated PMOSFET I-on-I-off is measured, which can be attributed to the enhanced hole mobility and the elimination of P+ poly-gate depletion.
URI:	http://dx.doi.org/10.1109/LED.2008.2001850 http://hdl.handle.net/11536/8432
ISSN:	0741-3106
DOI:	10.1109/LED.2008.2001850
期刊:	IEEE ELECTRON DEVICE LETTERS
Volume:	29
Issue:	9
起始頁:	998
結束頁:	1000
顯示於類別：	期刊論文

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