完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lin, Da-Wen | en_US |
dc.contributor.author | Wang, Maureen | en_US |
dc.contributor.author | Cheng, Ming-Lung | en_US |
dc.contributor.author | Sheu, Yi-Ming | en_US |
dc.contributor.author | Tarng, Bennet | en_US |
dc.contributor.author | Chu, Che-Min | en_US |
dc.contributor.author | Nieh, Chun-Wen | en_US |
dc.contributor.author | Lo, Chia-Ping | en_US |
dc.contributor.author | Tsai, Wen-Chi | en_US |
dc.contributor.author | Lin, Rachel | en_US |
dc.contributor.author | Wang, Shyh-Wei | en_US |
dc.contributor.author | Cheng, Kuan-Lun | en_US |
dc.contributor.author | Wu, Chii-Ming | en_US |
dc.contributor.author | Lei, Ming-Ta | en_US |
dc.contributor.author | Wu, Chung-Cheng | en_US |
dc.contributor.author | Diaz, Carlos H. | en_US |
dc.contributor.author | Chen, Ming-Jer | en_US |
dc.date.accessioned | 2014-12-08T15:11:01Z | - |
dc.date.available | 2014-12-08T15:11:01Z | - |
dc.date.issued | 2008-09-01 | en_US |
dc.identifier.issn | 0741-3106 | en_US |
dc.identifier.uri | http://dx.doi.org/10.1109/LED.2008.2001850 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/8432 | - |
dc.description.abstract | We demonstrate, for the first time, an integration-friendly selective PMOSFET fully silicided (FUSI) gate process. In this process, a millisecond-anneal (NISA) technique is utilized for the nickel silicide phase transformation. A highly tensile FUSI gate electrode is created and hence exerts compressive stress in the underlying channel. The highly flexible integration scheme successfully, and exclusively, implements uniform P+ FUSI gates for PMOSFETs while preserving a FUSI-free N+ poly-Si gate for PMOSFETs with the feature size down to 30 run. A 20% improvement in FUSI-gated PMOSFET I-on-I-off is measured, which can be attributed to the enhanced hole mobility and the elimination of P+ poly-gate depletion. | en_US |
dc.language.iso | en_US | en_US |
dc.subject | fully silicided (FUSI) | en_US |
dc.subject | millisecond-anneal (NISA) | en_US |
dc.subject | MOSFET | en_US |
dc.title | A millisecond-anneal-assisted selective fully silicided (FUSI) gate process | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.1109/LED.2008.2001850 | en_US |
dc.identifier.journal | IEEE ELECTRON DEVICE LETTERS | en_US |
dc.citation.volume | 29 | en_US |
dc.citation.issue | 9 | en_US |
dc.citation.spage | 998 | en_US |
dc.citation.epage | 1000 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000259573400009 | - |
dc.citation.woscount | 2 | - |
顯示於類別: | 期刊論文 |