標題: A millisecond-anneal-assisted selective fully silicided (FUSI) gate process
作者: Lin, Da-Wen
Wang, Maureen
Cheng, Ming-Lung
Sheu, Yi-Ming
Tarng, Bennet
Chu, Che-Min
Nieh, Chun-Wen
Lo, Chia-Ping
Tsai, Wen-Chi
Lin, Rachel
Wang, Shyh-Wei
Cheng, Kuan-Lun
Wu, Chii-Ming
Lei, Ming-Ta
Wu, Chung-Cheng
Diaz, Carlos H.
Chen, Ming-Jer
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: fully silicided (FUSI);millisecond-anneal (NISA);MOSFET
公開日期: 1-Sep-2008
摘要: We demonstrate, for the first time, an integration-friendly selective PMOSFET fully silicided (FUSI) gate process. In this process, a millisecond-anneal (NISA) technique is utilized for the nickel silicide phase transformation. A highly tensile FUSI gate electrode is created and hence exerts compressive stress in the underlying channel. The highly flexible integration scheme successfully, and exclusively, implements uniform P+ FUSI gates for PMOSFETs while preserving a FUSI-free N+ poly-Si gate for PMOSFETs with the feature size down to 30 run. A 20% improvement in FUSI-gated PMOSFET I-on-I-off is measured, which can be attributed to the enhanced hole mobility and the elimination of P+ poly-gate depletion.
URI: http://dx.doi.org/10.1109/LED.2008.2001850
http://hdl.handle.net/11536/8432
ISSN: 0741-3106
DOI: 10.1109/LED.2008.2001850
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 29
Issue: 9
起始頁: 998
結束頁: 1000
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