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公開日期標題作者
10-六月-19912-DIMENSIONAL ELECTRON GASES IN DELTA-DOPED GAAS/IN0.25GA0.75AS/GAAS HETEROSTRUCTURESLIN, W; HSU, WC; WU, TS; CHANG, SZ; WANG, C; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
8-五月-1995CHARACTERISTICS OF GRADED-LIKE MULTIPLE-DELTA-DOPED GAAS FIELD-EFFECT TRANSISTORSKAO, MJ; HSU, WC; HSU, RT; WU, YH; LIN, TY; CHANG, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-1991THE DELTA-DOPED IN0.25GA0.75AS/GAAS PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTOR STRUCTURES PREPARED BY LOW-PRESSURE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITIONCHANG, CY; LIN, W; HSU, WC; WU, TS; CHANG, SZ; WANG, C; 電控工程研究所; Institute of Electrical and Control Engineering
1-十二月-1988THE DOPED QUANTUM WELL GATE FET FABRICATED BY LOW-PRESSURE MOCVDLIN, W; LEI, MD; CHANG, CY; HSU, WC; DI, LB; KAI, F; 電控工程研究所; Institute of Electrical and Control Engineering
1-一月-1995HIGH CARRIER DENSITY AND MOBILITY IN GAAS/INGAAS/GAAS DOUBLE DELTA-DOPED CHANNELS HETEROSTRUCTURESKAO, MJ; HSU, WC; SHIEH, HM; LIU, WC; CHANG, CY; 電控工程研究所; Institute of Electrical and Control Engineering
1-六月-1989MBE GROWN UNDOPED SUPERLATTICE GATE AND MODULATION-DOPED BUFFER STRUCTURE FOR POWER FET APPLICATIONSLIU, WC; HSU, WC; LOUR, WS; WANG, RL; CHANG, CY; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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