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公開日期標題作者
1-一月-1970Bipolar resistive switching characteristics of Al-doped zinc tin oxide for nonvolatile memory applicationsFan, Yang-Shun; Liu, Po-Tsun; Teng, Li-Feng; Hsu, Ching-Hui; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
2012Flexible Non-Volatile Memory Based on Indium-Gallium-Zinc-Oxide with Excellent Reliability and FlexibilityFan, Yang-Shun; Hsu, Ching-Hui; Chang, Chih-Hsiang; Huang, Wei-Hsun; Yu, Ming-Chang; Liu, Po-Tsun; 光電工程學系; Department of Photonics
2011Indium-Gallium-Zinc-Oxide Based Resistive Switching Memory for System-on-Glass ApplicationFan, Yang-Shun; Hsu, Ching-Hui; Teng, Li-Feng; Yu, Ming-Chang; Liu, Po-Tsun; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
31-十二月-2013Investigation on amorphous InGaZnO based resistive switching memory with low-power, high-speed, high reliabilityFan, Yang-Shun; Liu, Po-Tsun; Hsu, Ching-Hui; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
11-二月-2013Multilevel resistive switching memory with amorphous InGaZnO-based thin filmHsu, Ching-Hui; Fan, Yang-Shun; Liu, Po-Tsun; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
2012非晶態氧化銦鎵鋅電阻式記憶體特性之研究許沁卉; Hsu, Ching-Hui; 劉柏村; Liu, Po-Tsun; 顯示科技研究所
顯示 1 到 6 筆資料，總共 6 筆