1. 目前位置：

瀏覽 的方式： 作者 Hsu, Chung-Wei

跳到： 0-9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
或是輸入前幾個字：  
顯示 1 到 15 筆資料，總共 15 筆
公開日期標題作者
六月-20163D resistive RAM cell design for high-density storage class memory-a reviewHudec, Boris; Hsu, Chung-Wei; Wang, I-Ting; Lai, Wei-Li; Chang, Che-Chia; Wang, Taifang; Frohlich, Karol; Ho, Chia-Hua; Lin, Chen-Hsi; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20143D Synaptic Architecture with Ultralow sub-10 fJ Energy per Spike for Neuromorphic ComputationWang, I-Ting; Lin, Yen-Chuan; Wang, Yu -Fen; Hsu, Chung-Wei; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-20133D Vertical TaOx/TiO2 RRAM with over 10(3) Self-Rectifying Ratio and Sub-mu A Operating CurrentHsu, Chung-Wei; Wan, Chia-Chen; Wang, I-Ting; Chen, Mei-Chin; Lo, Chun-Li; Lee, Yao-Jen; Jang, Wen-Yueh; Lin, Chen-Hsi; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2013Bipolar Ni/TiO2/HfO2/Ni RRAM With Multilevel States and Self-Rectifying CharacteristicsHsu, Chung-Wei; Hou, Tuo-Hung; Chen, Mei-Chin; Wang, I-Ting; Lo, Chun-Li; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2011Bipolar Nonlinear Ni/TiO(2)/Ni Selector for 1S1R Crossbar Array ApplicationsHuang, Jiun-Jia; Tseng, Yi-Ming; Hsu, Chung-Wei; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十月-2011Bipolar Nonlinear Ni/TiO2/Ni Selector for 1S1R Crossbar Array ApplicationsHuang, Jiun-Jia; Tseng, Yi-Ming; Hsu, Chung-Wei; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2015Categorization of Multilevel-Cell Storage-Class Memory: An RRAM ExampleLiu, Jen-Chieh; Hsu, Chung-Wei; Wang, I-Ting; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2015Crossbar array of selector-less TaOx/TiO2 bilayer RRAMChou, Chun-Tse; Hudec, Boris; Hsu, Chung-Wei; Lai, Wei-Li; Chang, Chih-Cheng; Hou, Tuo-Hung; 電機學院; 電子工程學系及電子研究所; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
1-四月-2012Flexible One Diode-One Resistor Crossbar Resistive-Switching MemoryHuang, Jiun-Jia; Hou, Tuo-Hung; Hsu, Chung-Wei; Tseng, Yi-Ming; Chang, Wen-Hsiung; Jang, Wen-Yueh; Lin, Chen-Hsi; 電子物理學系; Department of Electrophysics
25-四月-2014Homogeneous barrier modulation of TaOx/TiO2 bilayers for ultra-high endurance three-dimensional storage-class memoryHsu, Chung-Wei; Wang, Yu-Fen; Wan, Chia-Chen; Wang, I-Ting; Chou, Chun-Tse; Lai, Wei-Li; Lee, Yao-Jen; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2014Investigating MLC Variation of Filamentary and Non-filamentary RRAMLiu, Jen-Chieh; Wang, I-Ting; Hsu, Chung-Wei; Luo, Wun-Cheng; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011n One Selector-One Resistor (1S1R) Crossbar Array for High-density Flexible Memory ApplicationsHuang, Jiun-Jia; Tseng, Yi-Ming; Luo, Wun-Cheng; Hsu, Chung-Wei; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011One Selector-One Resistor (1S1R) Crossbar Array for High-density Flexible Memory ApplicationsHuang, Jiun-Jia; Tseng, Yi-Ming; Luo, Wun-Cheng; Hsu, Chung-Wei; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2017Statistical Study of RRAM MLC SET Variability Induced by Filament MorphologyHsu, Chung-Wei; Zheng, Xin; Wu, Yi; Hou, Tuo-Hung; Wong, H. -S. Philip; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016非線性電阻式記憶體於三維超高密度儲存級記憶體之應用徐崇威; 侯拓宏; Hsu, Chung-Wei; Hou, Tuo-Hong; 電子工程學系 電子研究所
顯示 1 到 15 筆資料，總共 15 筆