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Issue DateTitleAuthor(s)
2-Feb-1998Alterable temperature-dependent wavelength shifts in (InP)(2)/(GaP)(2) quantum wellsCheng, YC; Tai, K; Chou, ST; Huang, KF; Tu, SL; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
10-Dec-1998AuBe Ohmic contacts to p-type ZnTeLan, WH; Lin, WJ; Cheng, YC; Tai, K; Tasi, CM; Wu, PH; Cheng, KH; Chou, ST; Yang, CM; Cheng, YC; Huang, KF; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-Nov-1998Broadly tunable self-starting passively mode-locked Ti : sapphire laser with triple-strained quantum-well saturable Bragg reflectorShieh, JM; Huang, TC; Huang, KF; Wang, CL; Pan, CL; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-Nov-1998Broadly tunable self-starting passively mode-locked Ti : sapphire laser with triple-strained quantum-well saturable Bragg reflectorShieh, JM; Huang, TC; Huang, KF; Wang, CL; Pan, CL; 電子物理學系; 光電工程研究所; Department of Electrophysics; Institute of EO Enginerring
24-Jun-2005Comment on "Formation of repetitively nanosecond spatial solitons in a saturable absorber Q-switched laser" - ReplyChen, YF; Huang, KF; 電子物理學系; Department of Electrophysics
1-Nov-2004Critical point energy as a function of electric field determined by electroreflectance of surface-intrinsic-n(+) type doped GaAsChen, YS; Wu, KS; Wang, DP; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics
1-Jun-2002Deep electron trapping centers in Te-doped (AlxGa1-x)(0.5)In0.5P (x=0.5) layers grown by metal-organic chemical vapor depositionSung, WJ; Huang, KF; Tseng, TY; 電子物理學系; Department of Electrophysics
1-Dec-2001Deep hole traps created by gamma-ray irradiation of GaInPSung, WJ; Liu, TY; Yang, SL; Huang, KF; Tseng, TY; Chou, FI; Wei, YY; 電子物理學系; Department of Electrophysics
18-Jan-1999Determination of built-in field by applying fast Fourier transform to the photoreflectance of surface-intrinsic n(+)-type doped GaAsWang, DP; Wang, KR; Huang, KF; Huang, TC; Chu, AK; 電子物理學系; Department of Electrophysics
2-Jun-2006Devil's staircase in three-dimensional coherent waves localized on Lissajous parametric surfacesChen, YF; Lu, TH; Su, KW; Huang, KF; 電子物理學系; Department of Electrophysics
15-Feb-2001Diode-end-pumped passively mode-locked high-power Nd : YVO4 laser with a relaxed saturable Bragg reflectorChen, YF; Tsai, SW; Lan, YP; Wang, SC; Huang, KF; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
20-Sep-2003Diode-pumped passively mode-locked multiwatt Nd : GdVO4 laser with a saturable Bragg reflectorHe, JL; Lee, CK; Huang, JYJ; Wang, SC; Pan, CL; Huang, KF; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-Apr-1999Effect of modulating field on photoreflectance simulated by electroreflectanceChiou, SJ; Sung, YG; Wang, DP; Huang, KF; Huang, TC; Chu, AK; 電子物理學系; Department of Electrophysics
1-Jan-2002Effects of polarization on electroreflectance spectroscopy of surface-intrinsic n(+)-type doped GaAsSung, YG; Chiou, SJ; Wang, DP; Lu, YT; Huang, KF; Huang, TC; 交大名義發表; National Chiao Tung University
1-Jan-1998The effects of the magnitude of the modulation field on electroreflectance spectroscopy of undoped-n(+) type doped GaAsWang, DP; Huang, KM; Shen, TL; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics
15-Apr-2000Efficient terahertz radiation generation from a bulk InAs mirror as an intracavity terahertz radiation emitterLiu, ZL; Ono, S; Ohtake, H; Sarukura, N; Liu, TA; Huang, KF; Pan, CL; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
15-Sep-1997Electroreflectance of surface-intrinsic- n(+)-type doped GaAsWang, DP; Huang, KM; Shen, TL; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics
15-Sep-1997Electroreflectance of surface-intrinsic- n(+)-type doped GaAsWang, DP; Huang, KM; Shen, TL; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics
1-Dec-2003Electroreflectance of surface-intrinsic-n(+)-type-doped GaAs by using a large modulating fieldLin, YC; Wang, KQ; Wang, DP; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics
1-Apr-2002Evaluation of modulating field of photoreflectance of surface-intrinsic-n(+) type doped GaAs by using photoinduced voltageLee, WY; Chien, JY; Wang, DP; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics
Showing results 1 to 20 of 58  next >