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1-二月-2020Gallium Nitride (GaN) High-Electron-Mobility Transistors with Thick Copper Metallization Featuring a Power Density of 8.2 W/mm for Ka-Band ApplicationsLin, Y. C.; Chen, S. H.; Lee, P. H.; Lai, K. H.; Huang, T. J.; Chang, Edward Y.; Hsu, Heng-Tung; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2019Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise ApplicationWang, C.; Lin, Y. C.; Kuo, C. N.; Lee, M. W.; Yao, J. N.; Huang, T. J.; Hsu, H. T.; Chang, Edward Y.; 電子工程學系及電子研究所; 國際半導體學院; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2019Study of Thick Copper Metallization with WNx as Diffusion Barrier for AlGaN/GaN HEMTsLin, Y. C.; Lee, M. W.; Tsai, M. Y.; Wang, C.; Yao, J. N.; Huang, T. J.; Hsu, H. T.; Maa, J. S.; Chang, Edward Y.; 材料科學與工程學系; 光電系統研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
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