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顯示 1 到 13 筆資料，總共 13 筆
公開日期標題作者
1-十一月-1998Broadly tunable self-starting passively mode-locked Ti : sapphire laser with triple-strained quantum-well saturable Bragg reflectorShieh, JM; Huang, TC; Huang, KF; Wang, CL; Pan, CL; 電子物理學系; 光電工程學系; Department of Electrophysics; Department of Photonics
1-十一月-1998Broadly tunable self-starting passively mode-locked Ti : sapphire laser with triple-strained quantum-well saturable Bragg reflectorShieh, JM; Huang, TC; Huang, KF; Wang, CL; Pan, CL; 電子物理學系; 光電工程研究所; Department of Electrophysics; Institute of EO Enginerring
1-十一月-2004Critical point energy as a function of electric field determined by electroreflectance of surface-intrinsic-n(+) type doped GaAsChen, YS; Wu, KS; Wang, DP; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics
18-一月-1999Determination of built-in field by applying fast Fourier transform to the photoreflectance of surface-intrinsic n(+)-type doped GaAsWang, DP; Wang, KR; Huang, KF; Huang, TC; Chu, AK; 電子物理學系; Department of Electrophysics
1-四月-1999Effect of modulating field on photoreflectance simulated by electroreflectanceChiou, SJ; Sung, YG; Wang, DP; Huang, KF; Huang, TC; Chu, AK; 電子物理學系; Department of Electrophysics
1-一月-2002Effects of polarization on electroreflectance spectroscopy of surface-intrinsic n(+)-type doped GaAsSung, YG; Chiou, SJ; Wang, DP; Lu, YT; Huang, KF; Huang, TC; 交大名義發表; National Chiao Tung University
1-一月-1998The effects of the magnitude of the modulation field on electroreflectance spectroscopy of undoped-n(+) type doped GaAsWang, DP; Huang, KM; Shen, TL; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics
15-九月-1997Electroreflectance of surface-intrinsic- n(+)-type doped GaAsWang, DP; Huang, KM; Shen, TL; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics
15-九月-1997Electroreflectance of surface-intrinsic- n(+)-type doped GaAsWang, DP; Huang, KM; Shen, TL; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics
1-十二月-2003Electroreflectance of surface-intrinsic-n(+)-type-doped GaAs by using a large modulating fieldLin, YC; Wang, KQ; Wang, DP; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics
1-四月-2002Evaluation of modulating field of photoreflectance of surface-intrinsic-n(+) type doped GaAs by using photoinduced voltageLee, WY; Chien, JY; Wang, DP; Huang, KF; Huang, TC; 電子物理學系; Department of Electrophysics
1998A new type of saturable Bragg reflector with record-low saturation fluence and broad tuning rangeShieh, JM; Huang, TC; Huang, KF; Wang, CL; Pan, CL; 光電工程學系; Department of Photonics
29-十二月-1997Temperature dependence of Fermi level obtained by electroreflectance spectroscopy of undoped n(+)-type doped GaAsHuang, KM; Wang, KL; Wang, DP; Huang, KF; Huang, TC; Chu, AK; 電子物理學系; Department of Electrophysics
顯示 1 到 13 筆資料，總共 13 筆