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顯示 1 到 11 筆資料，總共 11 筆
公開日期標題作者
1-八月-2017Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (001) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor depositionMinh Thien Huu Ha; Sa Hoang Huynh; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Chang, Edward Yi; 材料科學與工程學系; 電機學院; 國際半導體學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering; International College of Semiconductor Technology
八月-2016Effects of In-Situ Plasma-Enhanced Atomic Layer Deposition Treatment on the Performance of HfO2/In0.53Ga0.47As Metal-Oxide-Semiconductor Field-Effect TransistorsQuang Ho Luc; Cheng, Shou Po; Chang, Po Chun; Huy Binh Do; Chen, Jin Han; Minh Thien Huu Ha; Sa Hoang Huynh; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-八月-2014Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation LayerQuang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-五月-2018Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor depositionMinh Thien Huu Ha; Sa Hoang Huynh; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Lee, Ching Ting; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-十二月-2015Impact of AlN Interfacial Dipole on Effective Work Function of Ni and Band Alignment of Ni/HfO2/In0.53Ga0.47As Gate-StackHuy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Hu, Chenming Calvin; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
5-九月-2016Impact of interfacial misfit dislocation growth mode on highly lattice-mismatched InxGa1-xSb epilayer grown on GaAs substrate by metalorganic chemical vapor depositionHuynh, Sa Hoang; Minh Thien Huu Ha; Huy Binh Do; Quang Ho Luc; Yu, Hung Wei; Chang, Edward Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-三月-2018In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma TreatmentLuc, Quang Ho; Yang, Kun Sheng; Lin, Jia Wei; Chang, Chia Chi; Huy Binh Do; Huynh, Sa Hoang; Minh Thien Huu Ha; Tuan Anh Nguyen; Lin, Yueh Chin; Hu, Chenming; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 照明與能源光電研究所; 電機學院; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Lighting and Energy Photonics; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-五月-2017Investigation of Mo/Ti/AlN/HfO2 High-k Metal Gate Stack for Low Power Consumption InGaAs NMOS Device ApplicationHuy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Sa Hoang Huynh; Tuan Anh Nguyen; Hu, Chenming; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
9-一月-2017Materials growth and band offset determination of Al2O3/In0.15Ga0.85Sb/GaSb/GaAs heterostructure grown by metalorganic chemical vapor depositionSa Hoang Huynh; Minh Thien Huu Ha; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Chang, Edward Yi; 材料科學與工程學系; 電機學院; 國際半導體學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering; International College of Semiconductor Technology
九月-2016Methods for Extracting Flat Band Voltage in the InGaAs High Mobility MaterialsHuy Binh Do; Quang Ho Luc; Minh Thien Huu Ha; Sa Hoang Huynh; Hu, Chenming; Lin, Yueh Chin; Chang, Edward Yi; 材料科學與工程學系; 電機學院; Department of Materials Science and Engineering; College of Electrical and Computer Engineering
1-四月-2018Nonlinear dependence of X-ray diffraction peak broadening in InxGa1-xSb epitaxial layers on GaAs substratesSa Hoang Huynh; Minh Thien Huu Ha; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
顯示 1 到 11 筆資料，總共 11 筆