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公開日期標題作者
2001Barrier characteristics of PECVD alpha-SiC : H dielectricsChiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jeng, SM; Jang, SM; Yu, CH; Liang, MS; 電子物理學系; Department of Electrophysics
1-六月-2001Characterization and modeling of edge direct tunneling (EDT) leakage in ultrathin gate oxide MOSFETsYang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, DCH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2001Comparative study of physical and electrical characteristics of F- and C-doped low-K CVD oxidesWu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2001Dielectric and barrier properties of spin-on organic aromatic low dielectric constant polymers FLARE and SiLKWu, ZC; Shiung, ZW; Wu, RG; Liu, YL; Wu, WH; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Hu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Edge hole direct tunneling in off-state ultrathin gate oxide p-channel MOSFETsYang, KN; Huang, HT; Chen, MJ; Lin, YM; Yu, MC; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十一月-2004Effects of O-2- and N-2-plasma treatments on copper surfaceChiang, CC; Chen, MC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2000Electrical reliability issues of integrating low-K dielectrics with Cu metallizationWu, ZC; Shiung, ZW; Wang, CC; Fang, KL; Wu, RG; Liu, YL; Tsui, BY; Chen, MC; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Improvement in leakage current and breakdown field of Cu-comb capacitor using a silicon oxycarbide dielectric barrierChiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1997Improvement of water-related hot-carrier reliability by optimizing the plasma-enhanced tetra-ethoxysilane deposition processLin, YM; Jang, SM; Yu, CH; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-1997Improvement of water-related hot-carrier reliability by optimizing the plasma-enhanced tetra-ethoxysilane deposition processLin, YM; Jang, SM; Yu, CH; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2003Leakage and breakdown mechanisms in cu damascene with a bilayer-structured a-SiCN/a-SiC dielectric barrierChiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2004Leakage and breakdown mechanisms of Cu comb capacitors with bilayer-structured alpha-SiCN/alpha-SiC Cu-cap barriersChiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2001Leakage mechanism in Cu damascene structure with methylsilane-doped low-K CVD oxide as intermetal dielectricWu, ZC; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Li, LJ; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Physical and barrier properties of amorphous silicon-oxycarbide deposited by PECVD from octamethylcyclotetrasiloxaneChiang, CC; Chen, CC; Li, LJ; Wu, ZC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2004Physical and barrier properties of PECVD amorphous silicon-oxycarbide from trimethylsilane and CO2Chiang, CC; Ko, IH; Chen, MC; Wu, ZC; Lu, YC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2003Physical and barrier properties of plasma enhanced chemical vapor deposition alpha-SiC : N : H filmsChiang, CC; Wu, ZC; Wu, WH; Chen, MC; Ko, CC; Chen, HP; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-七月-2003Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiC : H films from trimethylsilane and tetramethylsilaneChiang, CC; Chen, MC; Ko, CC; Wu, ZC; Jang, SM; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-八月-2003Physical and barrier properties of plasma-enhanced chemical vapor deposited alpha-SiCN : H films with different hydrogen contentsChiang, CC; Chen, MC; Ko, CC; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2001Physical and electrical characteristics of F- and C-doped low dielectric constant chemical vapor deposited oxidesWu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2001Physical and electrical characteristics of methylsilane- and trimethylsilane-doped low dielectric constant chemical vapor deposited oxidesWu, ZC; Shiung, ZW; Chiang, CC; Wu, WH; Chen, MC; Jeng, SM; Chang, W; Chou, PF; Jang, SM; Yu, CH; Liang, MS; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
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