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顯示 1 到 15 筆資料，總共 15 筆
公開日期標題作者
1-八月-2006Current properties of GaNV-defect using conductive atomic force microscopyLee, Lino; Ku, Ching-Shun; Ke, Wen-Cheng; Ho, Chih-Wei; Huang, Huai-Ying; Lee, Ming-Chih; Chen, Wen-Hsiung; Chou, Wu-Chin; Chen, Wei-Kuo; 電子物理學系; Department of Electrophysics
15-五月-2008Effects of growth temperature on InN/GaN nanodots grown by metal organic chemical vapor depositionChang, Wen-Hao; Ke, Wen-Cheng; Yu, Shu-Hung; Lee, Lin; Chen, Ching-Yu; Tsai, Wen-Che; Lin, Hsuan; Chou, Wu-Ching; Lee, Ming-Chih; Chen, Wei-Kuo; 電子物理學系; Department of Electrophysics
1-五月-2013Improved light reflectance and thermal stability of Ag-based ohmic contacts on p-type GaN with La additiveChen, I-Chen; Cheng, Bo-Yuan; Ke, Wen-Cheng; Kuo, Cheng-Huang; Chang, Li-Chuan; 照明與能源光電研究所; Institute of Lighting and Energy Photonics
1-七月-2016Influence of different aspect ratios on the structural and electrical properties of GaN thin films grown on nanoscale-patterned sapphire substratesLee, Fang-Wei; Ke, Wen-Cheng; Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo; 電子物理學系; Department of Electrophysics
15-十月-2012Influence of Mg-containing precursor flow rate on the structural, electrical and mechanical properties of Mg-doped GaN thin filmsKe, Wen-Cheng; Jian, Sheng-Rui; Chen, I-Chen; Jang, Jason S. -C.; Chen, Wei-Kuo; Juang, Jenh-Yih; 電子物理學系; Department of Electrophysics
1-二月-2013Influence of the GaN capping thickness on the strain and photoluminescence properties of InN/GaN quantum dotsKe, Wen-Cheng; Wu, Yue-Han; Houng, Wei-Chung; Wei, Chih-An; 材料科學與工程學系; Department of Materials Science and Engineering
21-十二月-2016InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire SubstrateKe, Wen-Cheng; Lee, Fang-Wei; Chiang, Chih-Yung; Liang, Zhong-Yi; Chen, Wei-Kuo; Seong, Tae-Yeon; 電子物理學系; Department of Electrophysics
31-十月-2018InGaN-based light-emitting diodes grown on various aspect ratios of concave nanopattern sapphire substrateKe, Wen-Cheng; Chiang, Chih-Yung; Son, Widi; Lee, Fang-Wei; 電子物理學系; Department of Electrophysics
1-六月-2012Mechanical Characteristics of Mg-Doped GaN Thin Films by NanoindentationJian, Sheng-Rui; Ke, Wen-Cheng; Juang, Jenh-Yih; 電子物理學系; Department of Electrophysics
17-五月-2007Nanoparticle structure and manufacturing process of multi-wavelength light emitting deviceChen, Wei-Kuo; Ke, Wen-Cheng
1-三月-2009Optical Properties of Uncapped InN Nanodots Grown at Various TemperaturesChen, Ching-Yu; Lee, Ling; Tai, Shin-Kai; Fu, Shao-Fu; Ke, Wen-Cheng; Chou, Wu-Ching; Chang, Wen-Hao; Lee, Ming-Chih; Chen, Wei-Kuo; 電子物理學系; Department of Electrophysics
9-二月-2006Process for manufacturing self-assembled nanoparticlesChen, Wei-Kuo; Lee, Ming-Chih; Chou, Wu-Ching; Chen, Wen-Hsiung; Ke, Wen-Cheng
9-二月-2009Size-dependent strain relaxation in InN islands grown on GaN by metalorganic chemical vapor depositionTsai, Wen-Che; Lin, Feng-Yi; Ke, Wen-Cheng; Lu, Shu-Kai; Cheng, Shun-Jen; Chou, Wu-Ching; Chen, Wei-Kuo; Lee, Ming-Chih; Chang, Wen-Hao; 電子物理學系; Department of Electrophysics
21-十月-2015Trap-assisted tunneling in aluminum-doped ZnO/indium oxynitride nanodot interlayer Ohmic contacts on p-GaNKe, Wen-Cheng; Lee, Fang-Wei; Yang, Cheng-Yi; Chen, Wei-Kuo; Huang, Hao-Ping; 電子物理學系; Department of Electrophysics
2016使用奈米結構改善氮化銦鎵發光元件之光電及結構特性研究李芳葦; 陳衛國; 柯文政; Lee, Fang-Wei; Chen, Wei-Kuo; Ke, Wen-Cheng; 電子物理系所
顯示 1 到 15 筆資料，總共 15 筆