國立陽明交通大學機構典藏：瀏覽交通大學機構典藏

瀏覽的方式：作者 Lee, Ching Ting

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公開日期	標題	作者
15-九月-2019	Crystal phase control in self-catalyzed InSb nanowires using basic growth parameter V/III ratio	Anandan, Deepak; Nagarajan, Venkatesan; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2019	The effect of a and Ga intermediate layer on the interfacial layer properties of epitaxial GaSb on GaSb grown by metalorganic chemical vapor deposition	Ha, Minh Thien Huu; Huynh, Sa Hoang; Do, Huy Binh; Lee, Ching Ting; Luc, Quang Ho; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 電子與資訊研究中心; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; Microelectronics and Information Systems Research Center; International College of Semiconductor Technology
1-五月-2018	Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition	Minh Thien Huu Ha; Sa Hoang Huynh; Huy Binh Do; Tuan Anh Nguyen; Quang Ho Luc; Lee, Ching Ting; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
15-一月-2019	Growth of foreign-catalyst-free vertical InAs/InSb heterostructure nanowires on Si (111) substrate by MOCVD	Anandan, Deepak; Kakkerla, Ramesh Kumar; Yu, Hung Wei; Ko, Hua Lun; Nagarajan, Venkatesan; Singh, Sankalp Kumar; Lee, Ching Ting; Chang, Edward Yi; 材料科學與工程學系; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology

顯示 1 到 4 筆資料，總共 4 筆