瀏覽 的方式: 作者 Lee, Heng-Yuan

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公開日期標題作者
1-一月-2015A 3T1R Nonvolatile TCAM Using MLC ReRAM with Sub-1ns Search TimeChang, Meng-Fan; Lin, Chien-Chen; Lee, Albert; Kuo, Chia-Chen; Yang, Geng-Hau; Tsai, Hsiang-Jen; Chen, Tien-Fu; Sheu, Shyh-Shyuan; Tseng, Pei-Ling; Lee, Heng-Yuan; Ku, Tzu-Kun; 交大名義發表; National Chiao Tung University
1-一月-2019A Comprehensive Modeling Framework for Ferroelectric Tunnel JunctionsHuang, Hsin-Hui; Wu, Tzu-Yun; Chu, Yueh-Hua; Wu, Ming-Hung; Hsu, Chien-Hua; Lee, Heng-Yuan; Sheu, Shyh-Shyuan; Lo, Wei-Chung; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-九月-2013Effect of ITO electrode with different oxygen contents on the electrical characteristics of HfOx RRAM devicesZhong, Chia-Wen; Tzeng, Wen-Hsien; Liu, Kou-Chen; Lin, Horng-Chih; Chang, Kow-Ming; Chan, Yi-Chun; Kuo, Chun-Chih; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019Extremely Compact Integrate-and-Fire STT-MRAM Neuron: A Pathway toward All-Spin Artificial Deep Neural NetworkWu, Ming-Hung; Hong, Ming-Chun; Chang, Chih-Cheng; Sahu, Paritosh; Wei, Jeng-Hua; Lee, Heng-Yuan; Sheu, Shyh-Shyuan; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Forming-free HfO2 Bipolar RRAM Device with Improved Endurance and High Speed OperationChen, Yu-Sheng; Wu, Tai-Yuan; Tzeng, Pei-Jer; Chen, Pang-Shiu; Lee, Heng-Yuan; Lin, Cha-Hsin; Chen, Frederick; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2014Investigation of Radiation Hardness of HfO2 Resistive Random Access MemoryTsui, Bing-Yue; Chang, Ko-Chin; Shew, Bor-Yuan; Lee, Heng-Yuan; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-十二月-2011Investigation of the effect of different oxygen partial pressure to LaAlO3 thin film properties and resistive switching characteristicsLiu, Kou-Chen; Tzeng, Wen-Hsien; Chang, Kow-Ming; Huang, Jiun-Jie; Lee, Yun-Ju; Yeh, Ping-Hung; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2019NV-BNN: An Accurate Deep Convolutional Neural Network Based on Binary STT-MRAM for Adaptive AI EdgeChang, Chih-Chcng; Wu, Ming-Hung; Lin, Jia-Wei; Li, Chun-Hsien; Parmar, Vivek; Lee, Heng-Yuan; Wei, Jeng-Hua; Sheu, Shyh-Shyuan; Suri, Manan; Chang, Tian-Sheuan; Hou, Tuo-Hung; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-二月-2012Resistive switching characteristics of multilayered (HfO2/Al2O3)(n) n=19 thin filmTzeng, Wen-Hsien; Zhong, Chia-Wen; Liu, Kou-Chen; Chang, Kow-Ming; Lin, Horng-Chih; Chan, Yi-Chun; Kuo, Chun-Chih; Tsai, Feng-Yu; Tseng, Ming Hong; Chen, Pang-Shiu; Lee, Heng-Yuan; Chen, Frederick; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-四月-2016Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stackLiu, Chien; Chen, Ping-Guang; Xie, Meng-Jie; Liu, Shao-Nong; Lee, Jun-Wei; Huang, Shao-Jia; Liu, Sally; Chen, Yu-Sheng; Lee, Heng-Yuan; Liao, Ming-Han; Chen, Pang-Shiu; Lee, Min-Hung; 電子物理學系; Department of Electrophysics
四月-2016Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stackLiu, Chien; Chen, Ping-Guang; Xie, Meng-Jie; Liu, Shao-Nong; Lee, Jun-Wei; Huang, Shao-Jia; Liu, Sally; Chen, Yu-Sheng; Lee, Heng-Yuan; Liao, Ming-Han; Chen, Pang-Shiu; Lee, Min-Hung; 電子物理學系; Department of Electrophysics
1-一月-2019Sub-nA Low-Current HZO Ferroelectric Tunnel Junction for High-Performance and Accurate Deep Learning AccelerationWu, Tzu-Yun; Huang, Hsin-Hui; Chu, Yueh-Hua; Chang, Chih-Cheng; Wu, Ming -Hung; Hsu, Chien-Hua; Wu, Chien -Ting; Wu, Min-Ci; Wu, Wen-Wei; Chang, Tian-Sheuan; Lee, Heng-Yuan; Sheu, Shyh-Shyuan; Lot, Wei-Chung; Hou, Tuo-Hung; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics