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公開日期標題作者
1-一月-2017A Comprehensive Study of 3-stage High Resistance State Retention Behavior for TMO ReRAMs from Single Cells to a Large ArrayLin, Yu-Hsuan; Ho, Yung-Han; Lee, Ming-Hsiu; Wang, Chao-Hung; Lin, Yu-Yu; Lee, Feng-Ming; Hsu, Kai-Chieh; Tseng, Po-Hao; Lee, Dai-Ying; Chiang, Kuang-Hao; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018Excellent High Temperature Retention of TiOXNV ReRAM by Interfacial Layer EngineeringLin, Yu-Hsuan; Lee, Dai-Ying; Wang, Chao-Hung; Lee, Ming-Hsiu; Ho, Yung-Han; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2016Excellent Resistance Variability Control of WOx ReRAM by a Smart Writing AlgorithmLin, Yu-Hsuan; Wu, Jau-Yi; Lee, Ming-Hsiu; Wang, Tien-Yen; Lin, Yu-Yu; Lee, Feng-Ming; Lee, Dai-Ying; Lai, Erh-Kun; Chiang, Kuang-Hao; Lung, Hsiang-Lan; Hsieh, Kuang-Yeu; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
十一月-2016A Novel Varying-Bias Read Scheme for MLC and Wide Temperature Range TMO ReRAMLin, Yu-Hsuan; Lee, Ming-Hsiu; Wu, Jau-Yi; Lin, Yu-Yu; Lee, Feng-Ming; Lee, Dai-Ying; Chiang, Kuang-Hao; Lai, Erh-Kun; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-三月-2019Performance Impacts of Analog ReRAM Non-ideality on Neuromorphic ComputingLin, Yu-Hsuan; Wang, Chao-Hung; Lee, Ming-Hsiu; Lee, Dai-Ying; Lin, Yu-Yu; Lee, Feng-Min; Lung, Hsiang-Lan; Wang, Keh-Chung; Tseng, Tseung-Yuen; Lu, Chih-Yuan; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
一月-2017A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage Class Memory ApplicationsKhwa, Win-San; Chang, Meng-Fan; Wu, Jau-Yi; Lee, Ming-Hsiu; Su, Tzu-Hsiang; Yang, Keng-Hao; Chen, Tien-Fu; Wang, Tien-Yen; Li, Hsiang-Pang; Brightsky, Matthew; Kim, Sangbum; Lung, Hsiang-Lan; Lam, Chung; 交大名義發表; National Chiao Tung University
一月-2017A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage Class Memory ApplicationsKhwa, Win-San; Chang, Meng-Fan; Wu, Jau-Yi; Lee, Ming-Hsiu; Su, Tzu-Hsiang; Yang, Keng-Hao; Chen, Tien-Fu; Wang, Tien-Yen; Li, Hsiang-Pang; Brightsky, Matthew; Kim, Sangbum; Lung, Hsiang-Lan; Lam, Chung; 交大名義發表; National Chiao Tung University
2016A Resistance-Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage-Class Memory ApplicationsKhwa, Win-San; Chang, Meng-Fan; Wu, Jau-Yi; Lee, Ming-Hsiu; Su, Tzu-Hsiang; Yang, Keng-Hao; Chen, Tien-Fu; Wang, Tien-Yen; Li, Hsiang-Pang; BrightSky, Matthew; Kim, SangBum; Lung, Hsiang-Lam; Lam, Chung; 交大名義發表; National Chiao Tung University
2009濕式清洗製程改善快閃記憶體金屬佈線與通道連接電阻降低研究李明修; Lee, Ming-Hsiu; 潘扶民; Pan, Fu-Ming; 工學院半導體材料與製程設備學程
顯示 1 到 9 筆資料，總共 9 筆