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公開日期標題作者
2001AIGaN/GaN HEMT sub-bands study using low-temperature photoluminescenceFang, CY; Lin, CF; Lee, CS; Chang, EY; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
2004Analysis and architecture design for high performance JPEG2000 coprocessorWu, BF; Lin, CF; 電控工程研究所; Institute of Electrical and Control Engineering
1-五月-2001Beryllium-implanted P-type GaN with high carrier concentrationYu, CC; Chu, CF; Tsai, JY; Lin, CF; Lan, WH; Chiang, CI; Wang, SC; 光電工程學系; Department of Photonics
1-三月-1999Blind adaptive energy estimation for decorrelating decision-feedback CDMA multiuser detection using learning-type stochastic approximationsChang, PR; Lee, CC; Lin, CF; 電信工程研究所; Institute of Communications Engineering
2000Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structuresLin, CF; Shu, CK; Lee, WH; Wen, TC; Chu, CF; Fang, JY; Chen, WK; Lee, WI; Wang, SC; 光電工程學系; Department of Photonics
19-一月-2004Characteristics of stable emission GaN-based resonant-cavity light-emitting diodesLin, CF; Yao, HH; Lu, JW; Hsieh, YL; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
18-十二月-1997Characterization of GaN epitaxial layers on SiC substrates with AlxGa1-xN buffer layersLin, CF; Cheng, HC; Feng, MS; Chi, GC; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-三月-1997Chemical-mechanical polishing and material characteristics of plasma-enhanced chemically vapor deposited fluorinated oxide thin filmsTseng, WT; Hsieh, YT; Lin, CF; Tsai, MS; Feng, MS; 材料科學與工程學系; 奈米中心; Department of Materials Science and Engineering; Nano Facility Center
1-二月-1997CMP of fluorinated silicon dioxide: Is it necessary and feasible?Tseng, WT; Hsieh, YT; Lin, CF; 交大名義發表; National Chiao Tung University
15-二月-2003Comparison of p-side down and p-side up GaN light-emitting diodes fabricated by laser lift-offChu, CF; Yu, CC; Cheng, HC; Lin, CF; Wang, SC; 光電工程學系; Department of Photonics
1-五月-2003Correlation between dewatering index and dewatering performance of three mechanical dewatering devicesPan, JRS; Huang, CP; Cherng, MY; Li, KC; Lin, CF; 環境工程研究所; Institute of Environmental Engineering
24-六月-1996The dependence of the electrical characteristics of the GaN epitaxial layer on the thermal treatment of the GaN buffer layerLin, CF; Chi, GC; Feng, MS; Guo, JD; Tsang, JS; Hong, JMH; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
1-三月-2000Design of multicode CDMA systems for 3-D stereoscopic video over wireless ATM networksChang, PR; Lin, CF; Wu, MJ; 電信工程研究所; Institute of Communications Engineering
1-一月-2000Design of spread spectrum multicode CDMA transport architecture for multimedia servicesChang, PR; Lin, CF; 電信工程研究所; Institute of Communications Engineering
1-九月-1997The effect of indium impurity on the DC-etching behaviour of aluminum foil for electrolytic capacitor usageLin, W; Tu, GC; Lin, CF; Peng, YM; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-1996The effect of lead impurity on the DC-etching behaviour of aluminum foil for electrolytic capacitor usageLin, W; Tu, GC; Lin, CF; Peng, YM; 材料科學與工程學系; Department of Materials Science and Engineering
1-六月-1996The effect of lead impurity on the DC-etching behaviour of aluminum foil for electrolytic capacitor usageLin, W; Tu, GC; Lin, CF; Peng, YM; 材料科學與工程學系; Department of Materials Science and Engineering
25-三月-2004Effect of rapid thermal annealing on beryllium implanted p-type GaNHuang, HW; Kao, CC; Tsai, JY; Yu, CC; Chu, CF; Lee, JY; Kuo, SY; Lin, CF; Kuo, HC; Wang, SC; 光電工程學系; Department of Photonics
1-十一月-1999Effects of methyl silsesquioxane electron-beam curing on device characteristics of logic and four-transistor static random-access memoryLin, CF; Tung, IC; Feng, MS; 材料科學與工程學系; Department of Materials Science and Engineering
1-十一月-2004An efficient architecture for JPEG2000 coprocessorWu, BF; Lin, CF; 電控工程研究所; Institute of Electrical and Control Engineering
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