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公開日期標題作者
2012Characteristics of N-Type Planar Junctionless Poly-Si Thin-Film TransistorsLin, C. I.; Lin, H. C.; Huang, T. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2017Counter-intuitive Ge/Si/O interactions and Ge/Si symbiosis enable the creatation of new classes of exciting nanoelectronic and nanophotonic devicesHsueh, C. Y.; Huang, T. L.; Peng, K. P.; Kuo, M. H.; Lin, H. C.; Li, Pei-Wen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-六月-2007Dynamic NBTI characteristics of PMOSFETs with PE-SiN cappingLu, C. Y.; Lin, H. C.; Lee, Y. J.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011An Electrically Tunable Focusing Pico Projector Using a Liquid Crystal Lens as an Active Optical ElementLin, H. C.; Chen, M. S.; Lin, Y. H.; 光電工程學系; Department of Photonics
2007Impacts of NH(3) plasma treatment on double-gated poly-Si nanowire thin-film transistorsLee, K. H.; Lin, H. C.; Hsu, H. H.; Huang, T. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2009Instability analysis of modulated Taylor vorticesYang, W. M.; Lin, H. C.; 機械工程學系; Department of Mechanical Engineering
1-五月-2010LOWEST STABILITY BOUNDARY ON FLOW OF CONCENTRIC ROTATING CYLINDERSLin, H. C.; Yang, W. M.; 機械工程學系; Department of Mechanical Engineering
2007New understanding of metal-insulator-metal (MIM) capacitor degradation behaviorHung, Chi-Chao; Oates, Anthony S.; Lin, H. C.; Chang, Percy; Wang, J. L.; Huang, C. C.; Yau, Y. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
30-五月-2007Operations of poly-Si nanowire thin-film transistors with a multiple-gated configurationSu, C. J.; Lin, H. C.; Tsai, H. H.; Hsu, H. H.; Wang, T. M.; Huang, T. Y.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-一月-2018Self-organized gate stack of Ge nanosphere/SiO2/Si1-xGex enables Ge-based monolithically-integrated electronics and photonics on Si platformLiao, P. H.; Kuo, M. H.; Tien, C. W.; Chang, Y. L.; Hong, P. Y.; George, T.; Lin, H. C.; Li, P. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
18-五月-2018Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devicesLiao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2015Stability of High Performance p-type SnO TFTsZhong, C. W.; Tsai, H. Y.; Lin, H. C.; Liu, K. C.; Huang, T. Y.; 電機學院; 電子工程學系及電子研究所; College of Electrical and Computer Engineering; Department of Electronics Engineering and Institute of Electronics
1-十一月-2010TRANSFORMATIONAL PHENOMENON IN THE FIELD OF TAYLOR-COUETTE FLOWYang, W. M.; Lin, H. C.; 機械工程學系; Department of Mechanical Engineering
1-五月-2019Tunable Ge content and thickness in hemispherical-shell shaped SiGe recess channels created by proximal Ge nanospheresChen, C. T.; Peng, K. P.; George, T.; Lin, H. C.; Li, Pei-Wen; 交大名義發表; National Chiao Tung University
1-一月-2017Very large photogain and high photorespone linearity of Ge-dot photoMOSFETs operating in accumulation-mode for monolithic Si photonicsKuo, Ming-Hao; Liu, B. J.; Huang, T. L.; Lin, H. C.; Li, Pei-Wen; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
顯示 1 到 15 筆資料，總共 15 筆