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公開日期標題作者
2008AlGaInAs quantum-well 1.3-mu m laser by a diode-pumped actively Q-switched Nd : GdVO4 laser - art. no. 68712KHuang, S. C.; Su, K. W.; Li, A.; Liu, S. C.; Chen, Y. F.; Hunag, K. F.; 電子物理學系; Department of Electrophysics
1-六月-2007AlGaInAs quantum-well as a saturable absorber in a diode-pumped passively Q-switched solid-state laserHuang, S. C.; Liu, S. C.; Li, A.; Su, K. W.; Chen, Y. F.; Huang, K. F.; 電子物理學系; Department of Electrophysics
1-三月-2009AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO(4) laserHuang, S. C.; Chang, H. L.; Su, K. W.; Li, A.; Liu, S. C.; Chen, Y. F.; Huang, K. F.; 電子物理學系; Department of Electrophysics
1-三月-2009AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laserHuang, S. C.; Chang, H. L.; Su, K. W.; Li, A.; Liu, S. C.; Chen, Y. F.; Huang, K. F.; 電子物理學系; Department of Electrophysics
2016Enhancement-Mode GaN MIS-HEMTs with HfLaOx Gate InsulatorLin, Y. C.; Lin, J. C.; Lin, Y.; Wu, C. H.; Huang, Y. X.; Liu, S. C.; Hsu, H. T.; Hsieh, T. E.; Kakushima, K.; Iwai, H.; Chang, E. Y.; 材料科學與工程學系; 國際半導體學院; Department of Materials Science and Engineering; International College of Semiconductor Technology
1-一月-2016GaN MIS-HEMT with Low Dynamic ON-resistance Using SiON PassivationLiu, S. C.; Huang, C. K.; Chang, E. Y.; 材料科學與工程學系; 電子工程學系及電子研究所; Department of Materials Science and Engineering; Department of Electronics Engineering and Institute of Electronics
2015Improved Reliability of GaN HEMTs Using N-2 Plasma Surface TreatmentLiu, S. C.; Dai, G. M.; Chang, E. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
1-九月-2006InGaAsP quantum-wells saturable absorber for diode-pumped passively Q-switched 1.3-mu m lasersLi, A.; Liu, S. C.; Su, K. W.; Liao, Y. L.; Huang, S. C.; Chen, Y. F.; Huang, K. F.; 電子物理學系; Department of Electrophysics
2014Low Current Collapse and Low Leakage GaN MIS-HEMT Using AlN/SiN as Gate Dielectric and Passivation LayerLiu, S. C.; Wong, Y. Y.; Lin, Y. C.; Chang, E. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
2013Low Leakage Current GaN MIS-HEMT with SiNx Gate Insulator using N-2 Plasma TreatmentLiu, S. C.; Wang, H. C.; Chang, E. Y.; 材料科學與工程學系; Department of Materials Science and Engineering
2010Low-temperature study of lasing characteristics for 1.3-mu m AlGaInAs quantum-well laser pumped by an actively Q-switched Nd:YAG laserSu, K. W.; Chen, Yi-Fan; Huang, S. C.; Li, A.; Liu, S. C.; Chen, Y. F.; Huang, K. F.; 電子物理學系; Department of Electrophysics
顯示 1 到 11 筆資料，總共 11 筆